Dangling bond states at the diamond surface characterized by Dynamic Tunneling force microscopy*

Recently the creation of atomic scale quantum states composed of dangling bonds (DBs) at the surface of hydrogenated Si (100) has been explored [1]. At room temperature, electrons in these DB states are trapped for sub-nanosecond times.  At the bare reconstructed diamond surface C(100)-(2x1), some DB states have much larger trapping energies (~ 1 eV) [2].  Electrons can be trapped in these atomic sized states for long times (hours) at room temperature, providing a basis for creating atomic scale charge and spin quantum devices [3]. Dynamic Tunneling Force Microscopy  (DTFM) is an effective method to characterize the spatial distribution and energy of such electron trap states [4,5].   DTFM measurements of DB states at the diamond surface will be presented and the properties of the DB states will be discussed.  [1] J.L. Pitters, L.Livadaru, M.B. Haider & R.A. Wolkow, J. Chem. Phys. 134, 064712 (2011). [2] Z. Zhang, M. Wensell & J. Bernholc, Phys.  Rev. B, 51, 5291 (1995).  [3] L. Livadaru, J. Pitters, M. Taucer  & R.A. Wolkow, Phys. Rev. B, 84, 205416 (2011). [4] R. Wang, S.W. King & C.C. Williams, Appl. Phys. Lett. 105, 052903 (2014).  [5] R. Wang & C.C. Williams, Rev. Sci. Instr. 86, 093708 (2015).