Bulletin of the American Physical Society
Annual Meeting of the APS Four Corners Section
Volume 60, Number 11
Friday–Saturday, October 16–17, 2015; Tempe, Arizona
Session B3: Condensed Matter I |
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Chair: Tingyong Chen, Arizona State University Room: MU202 |
Friday, October 16, 2015 10:50AM - 11:14AM |
B3.00001: Voltage controlled spintronic structures Invited Speaker: Weigang Wang Electron undoubtedly is one of the most important elementary particles that are intimately related to human activities. From radio, TV to smart phone, electronics has totally revolutionized our lives. Surprisingly, in most electronics to date we have only utilized the charge carried by electrons, while ignoring the other inherent property, the spin. In Spintronics we explicitly make use of the spin degree of freedom of electrons to achieve new functionalities. After a brief introduction, I will describe the spin-dependent effects controlled by magnetic field and electric current. I will then focus on the exploration of new spintronic phenomena that can be controlled by electric field via the applied voltage, driven by the premise that voltage-controlled switching would be far more energy efficient and compatible with the ubiquitous semiconductor devices. I will talk about the earlier effort in searching for room temperature magnetic semiconductors where the magnetism is mediated by charge carriers. Then I will describe the new development in exploiting the electric field effect in novel systems where the magnetic anisotropy or even the magnetism of the ultra-thin ferromagnetic films ( \textasciitilde 1nm) can be completely controlled by the applied voltages, through both the electronic and ionic effects. This work was supported in part by NSF (ECCS-1310338) and by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA. [Preview Abstract] |
Friday, October 16, 2015 11:14AM - 11:26AM |
B3.00002: ABSTRACT WITHDRAWN |
Friday, October 16, 2015 11:26AM - 11:38AM |
B3.00003: Enhancement of Spin Polarization by Spin Anisotropic Scattering Dongrin Kim, Gejien Zhao, Bochao Li, Ji Zhang, Jessica Gifford, Tingyong Chen Highly spin-polarized current is desirable for spintronics, but spin is often required to be injected from a spin source to another material via an interface. This often significantly reduces spin polarization of the current. Some materials can scatter spin-up and spin-down electrons very differently, and they can be utilized to create a spin-filtering interface; this actually enhances spin polarization. At a normal metal/superconductor interface, Andreev reflection occurs.~ This can be utilized to measure spin polarization of the normal metal.~ In this work, we theoretically calculate the Andreev reflection spectroscopy of an interface with spin anisotropic scattering. We will show that the Andreev spectra is symmetrical as a function of the bias voltage, and that the spin polarization value can still be determined. With a proper interface (with spin filtering), the spin polarization value can be significantly enhanced, and this will aid in an enhanced performance of spintronic devices. [Preview Abstract] |
Friday, October 16, 2015 11:38AM - 11:50AM |
B3.00004: Three-D Dielectric Capacitor Reese Petersen Integrated circuits have increased in complexity and decreased in size for over 50 years. They are ubiquitous and relied upon heavily in modern society. Capacitors are an essential part of almost every complete electronic device. We are developing capacitors for on-chip integration with much higher capacitance per area and volume than currently used silicon-based trench capacitors. We have worked with Arradiance, Inc. to conformally coat dense carbon nanotube arrays with hafnium oxide and will soon have tested capacitor prototypes as we improve the coating uniformity. [Preview Abstract] |
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