Bulletin of the American Physical Society
2005 TSAPS/AAPT/SPS Joint Fall Meeting
Thursday–Saturday, October 20–22, 2005; Houston, TX
Session B6: Poster Session II |
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Room: Waldorf Astoria Lobby |
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B6.00001: Previously Unobserved Emission Lines in Neutral Helium Edge Plasma Conditions Timothy Imholt, Adam Pirkle, Daniel Pirkle, Orlando Cabarcos, Erich Gross, Bruce Gnade, David Allara High resolution optical emission spectroscopy can be very useful as a diagnostic technique for identifying atomic and molecular species in a gaseous plasma environment. In our recent studies we have used a 1250M optical emission spectrometer with a high sensitivity CCD camera to characterize microwave excited plasmas of $^{3}$He and $^{4}$He isotopes under conditions to produce excited neutral helium species. Spectra were obtained over the 200 to 900 nm range. Using calibration by Neon and Mercury lamps the peaks positions were accurately determined, the lineshapes fit to standard lineshape expressions and the spectra compared with the NIST database. Our data compare accurately with the previously observed lines in the NIST database and in cases where the weaker lines have not been experimentally observed previously our data show excellent agreement with the predicted positions in the NIST database. [Preview Abstract] |
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B6.00002: Analysis of several Methods of Determining the Concentration of $^{11}$B on Implanted Si Wafers used in the Semiconductor Industry. Nelson Martinez, Matthew McCleskey, M.E. Peretich, G. Downing, J.L. Duggan, Fabian Naab, B.N. Guo Scaling of device dimensions is the key enabler for the economic manufacture of Large Scale Integration (ULSI) Chips in the semiconductor industry. Shallow implant boron is, and will continue to be, one of the most important component, to ULSI manufacturing. Implant energies of less than 1000 eV for boron concentrations in the range from 5 x 10$^{14}$ - 5 x 10$^{16}$ B/cm$^{2}$ are common. In this paper we have studied three ``state of the art'' techniques for analyzing the boron concentration on pure virgin silicon. These are: the $^{11}$B(p,$\alpha )^{8}$Be nuclear resonance reaction, the $^{11}$B($^{3}$He,p)$^{12}$C nuclear reaction, and the cold neutron beam at NIST for the $^{10}$B(n,$\alpha )^{7}$Li. [Preview Abstract] |
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B6.00003: Properties of nickel silicide formed by rapid thermal processing of thin Ni layers on Si (001) S. Zollner, S. Bolton, D. Jawarani, X. Zhu, R.B. Gregory, J. Alvis, R. Noble, M. Jahanbani, B.-Y. Nguyen Transition metal silicides are used in the semiconductor industry as Ohmic (low-barrier) contacts between metal interconnects (Al, Cu, W) and implanted Si source, drain, and gate regions of CMOS transistors. Nickel silicide is particularly attractive in devices below 50 nm gate length, because 10 nm of Ni evaporated on Si consumes only 9 nm of Si to form 15 nm of low-resistivity NiSi at low annealing temperatures. However, the high diffusion rate of Ni in Si and the poor thermal stability of NiSi pose challenges for device integration. We compare the solid-state chemistry reactions of 10 nm Ni blanket layers with Si substrates under steady-state annealing and rapid thermal processing conditions. We find that rapid thermal annealing at 360°C is equivalent to steady-state heating at 300°C for 30 s and produces metal-rich Ni-Si phases. At lower thermal budgets, the Ni layer is not fully converted into Ni2Si and partially removed by selective etching in a sulfuric acid/hydrogen peroxide mixture. At higher temperatures, the reaction progresses further and produces monosilicide NiSi. This was investigated using x-ray fluorescence, powder x-ray diffraction, and x-ray reflectivity. At very high temperatures, NiSi agglomerates and the silicide film becomes discontinuous. Disilicide formation was not observed on our blanket layers, prevented by agglomeration. [Preview Abstract] |
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B6.00004: Fabrication of Waveguides for Characterization of Low-k Dielectric Thin Films James McDonald, Kevin Radican, Heather Galloway, David Donnelly, Deborah Koeck As microelectronic devices increase in clock frequency, the RC time delay in transmission lines is becoming an obstacle. A technique used in overcoming this obstacle is the use of low-k dielectrics along with less resistive metals such as Al in microchip fabrication. We have demonstrated a method of constructing coplanar waveguide test structures on low-k dielectric thin films deposited on SiC/Si wafers using standard industry techniques. The dielectric properties of the low-k dielectric thin films on wafers can then measured at microwave frequencies (.5 to 13.5 GHz) using these test structures. The details of the fabrication of the waveguide structures using DC magnetron sputter deposition, semiconductor laser beam lithography, and reactive plasma etching with tetrafluoroethane will be reported. The magnetron chamber was pumped to a base pressure of 4 x 10-7 Torr that yielded a deposition rate of 100 angstroms a second. The photolithography process is a combination of several steps, spinning, baking, exposing, and developing. The plasma etching was in the magnetron with a plasma consisting of HFC 134a (1,1,1,2-tetrafluroethane) and O$_2$ at 20 mTorr to remove the low-k and SiC under layer. [Preview Abstract] |
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B6.00005: Implementation of a Thermal Desorption Apparatus in High-k Dielectrics Ezekiel Walker, Vaishali Ukirde, Mohamed El Bouanani Hydrogen plays a major role in semiconductor technology due to its pervasiveness in a variety of processes such deposition and post annealing of electronic structures. Therefore, it has become increasingly important to better understand the properties and behavior of hydrogen in semiconductors in order to improve the electronic performance of Advanced Metal-Oxide-Semiconductor (MOS) structures. Hydrogen is known to have the most ambivalent (both beneficial and detrimental) in MOS devices. Trap transformations under annealing treatments in hydrogen ambient is known to be highly efficient in improving the device characteristics by passivating defects at the SiO$_{2}$/Si interface. Comparable behavior in observed in the high-k dielectric based MOS structures. Despite a wealth of electrical knowledge, there is little direct information about the actual location and concentration of hydrogen, the trapping mechanisms and the effects under hydrogen annealing in high-k dielectric based MOS devices. Thermal Desorption studies would contribute in understanding hydrogen bonding strength and configurations in advanced MOS nano-structures. [Preview Abstract] |
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B6.00006: Empirical Evaluation of a Novel Design for an electrostatic Quadrupole Triplet Ion Beam Lens L.R. Burns |
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B6.00007: Microstructural Analysis of Ternary NiTiPt High Temperature Shape Memory Alloys E. Stenmark |
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B6.00008: Exploration of Three-Dimensional Magnetic Vortex Structures by Using Scanning Ion Microscopy with Polarization Analysis (SIMPA) Jian Li |
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B6.00009: Radiation Effects in Cu-doped Lithium Tetraborate Glass Barbara Johnson |
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B6.00010: $^{37}$Al(p,y)$^{28}$ Kristi A. Michels This abstract was not submitted electronically. [Preview Abstract] |
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B6.00011: Dissipation of classical energy in nonlinear quantum systems Yuriy Pereverzev, Andrey Pereverzev, Oleg Prezhdo Time dependence of energy transfer from classical to quantum reservoir in nonlinear system is considered. Classical energy is understood as the part of system energy that is expressible through average values of coordinates and momenta. Dissipation of classical energy is studied in exactly solvable Jaynes-Cummings model. This process is also investigated using numerical and approximate analytical approaches in a simple nonlinear oscillator model. [Preview Abstract] |
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B6.00012: AL A\&M Philip Land |
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B6.00013: Investigation of Giant Magnetoresistance in thin Ni-Cu-NiFe Structures C.D. Stehno |
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B6.00014: Shifting of Cholesterol Maximum Solubility in Lipid Bilayers by Ceramide M.R. Ali, J. Huang Cholesterol oxidase (COD) activity assay has been proven to be an excellent method to measure the chemical potential of cholesterol in lipid bilayers. The time-based reaction rate gives the direct measure of the escape tendency or chemical potential of cholesterol. The Umbrella model (Huang and Feigenson, Biophysical Journal, vol.\textbf{76}: pp.2142-2157, 1999) predicted the formation of regular distribution domains of cholesterol and a steep rise of cholesterol chemical potential at the cholesterol solubility limit. Thus, the COD activity assay can be used to measure the maximum solubility of cholesterol in lipid bilayers. In this study, we systematically investigated the shifting of cholesterol solubility limit in POPC lipid bilayers as a function of ceramide composition. Samples prepared with 0{\%} to 40{\%} ceramide showed a gradual shift of solubility limit to the lower cholesterol mole fractions. The result is in a good agreement with the Umbrella model: ceramide molecules, like cholesterol, also need the neighboring headgroups of PC to cover their nonpolar bodies in a lipid bilayer. When phosphatidylcholines are replaced by smaller head group molecules, such as ceramide, the membrane becomes less capable to host cholesterol molecules. [Preview Abstract] |
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