4:30 PM–4:30 PM, Friday, October 10, 2008
Student Union - E 156
Abstract ID: BAPS.2008.OSF.P1.20
Sarah Jane Gabig
(Wright State University)
Gary Farlow
(Wright State University)
When metal/semiconductor schotky barriers are not practical, an electrolyte/semiconductor interface can be used to make capacitance-voltage (C-V) measurements. The physics of such electrochemical C-V measurements will be described. Electrical properties of ZnO were measured by electrochemical C-V techniques and photovoltage spectroscopy using an Accent 4400 Electrochemical CV system. Specifically, the electrical behavior of a 0.1 M ZnCl$_{2}$ electrolyte-ZnO interface has been investigated with attention to the electrolyte-ZnO interface's C-V dependence on carrier frequency.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.OSF.P1.20