Bulletin of the American Physical Society
2023 APS March Meeting
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session Z23: 2D Materials: Optical and Electronic Properties
11:30 AM–1:42 PM,
Friday, March 10, 2023
Room: Room 215
Sponsoring
Unit:
DCMP
Chair: Huan Jiang, University of Louisville
Abstract: Z23.00001 : Understanding Low Structural Relaxation in Phase-Change Chalcogenide Superlattices*
11:30 AM–11:42 AM
Presenter:
Xiangjin Wu
(Stanford University)
Authors:
Xiangjin Wu
(Stanford University)
Asir Intisar Khan
(Stanford University)
Kangsik Kim
(Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea)
Zonghoon Lee
(UNIST)
H.-S. Philip Wong
(Stanford University)
Eric Pop
(Stanford Univ)
Collaboration:
N/A
Here, we uncover that resistance drift induced by structural relaxation is strongly suppressed in superlattices of Sb2Te3/GST [2], compared to memory films with only GST. Temperature-dependent electrical measurements of PCM based on such superlattices reveal the conduction activation energy is lowest in superlattices with 2 nm Sb2Te3 and 1.8 nm GST (16 periods), marking low structural relaxation and enabling low resistance drift. However, superlattices with thicker unit layers (e.g. 16 nm Sb2Te3 and 14 nm GST), or with strongly intermixed interfaces, exhibit greater structural relaxation, comparable to bulk GST. This points to the key role of superlattice interfaces in limiting resistance drift, and the fundamental insights obtained here are essential to PCM-based applications [3].
Refs: [1] M. Boniardi et al., Appl. Phys. Lett. (2011). [2] A. I. Khan, E. Pop et al., Nano Letters (2022). [3] A. I. Khan, E. Pop et al., Science (2021).
*This work was supported in part by the Stanford Non-Volatile Memory Technology Research Initiative (NMTRI), in part by the Semiconductor Research Corporation (SRC) and in part by the Institute for Basic Science under Grant IBSR019-D1.
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