Bulletin of the American Physical Society
2023 APS March Meeting
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session VV01: V: Poster Session III (7:00am-8:00am, PST)
7:00 AM,
Wednesday, March 22, 2023
Room: Virtual Room 1
Abstract: VV01.00028 : Graphene enabled practical Molecular Electronics
Presenter:
BHARTENDU PAPNAI
(Nano-Science and Technology,Taiwan International Graduate Program,Academia Sinica and Department of Engineering and System Science,National Tsing Hua University, Taiwan)
Authors:
BHARTENDU PAPNAI
(Nano-Science and Technology,Taiwan International Graduate Program,Academia Sinica and Department of Engineering and System Science,National Tsing Hua University, Taiwan)
Mario Hofmann
(Department of Physics, National Taiwan University, Taipei 106, Taiwan)
This works shows an intriguing finding by fabricating a vertical molecular field effect transistor in conjugation with graphene in such a way that the thickness in nm and gate voltage can be tuned according to the desired device. In this work, the semiconducting properties of the new compounds have been estimated in the monolayer Vertical Molecular Field Effect Transistor (VFET) fabricated by the Langmuir Blodgett (LB) technique using the bottom-contact and bottom-gate device structure. The morphology of the LB layer used as the active layer in VFETs has been investigated using atomic force microscopy.The current-voltage measurements of the devices show the decrease in current on further increase in voltage in a device which termed Negative Differential Resistance (NDR) shows high Peak-to-Valley Current Ratio (PVCR) for the devices.The understanding of thermoelectric properties of molecular junctions by experimental investigation of molecular thin film transistor is studied.The Time-Domain Thermoreflectance (TDTR) techniques and the figure of merit reveals an interesting feature of Graphene-Langmuir Blodgett film based molecular transistor.
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