Bulletin of the American Physical Society
2023 APS March Meeting
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session T34: Thermodynamic and Transport Properties
11:30 AM–2:30 PM,
Thursday, March 9, 2023
Room: Room 226/227
Sponsoring
Unit:
FIAP
Chair: Peifan Liu, Duke University
Abstract: T34.00011 : Molecular beam epitaxial development of AlSb on Silicon substrates for radiation detector applications*
1:30 PM–1:42 PM
Presenter:
mega frost
(Universisty of New Mexico)
Authors:
ganesh balakrishnan
(University of New Mexico)
mega frost
(Universisty of New Mexico)
Adam A Hecht
(University of new Mexico)
Alexander Barzilov
(University of Nevada Las Vegas)
shea tonkinson
(University of new Mexico)
Alexandria ragsdale
(University of New mexico)
Maya N Kutty
(University of New Mexico)
Charles Han
(University of Nevada, Las Vegas)
Kaleab Ayalew
(University of Nevada, Las Vegas)
Jaeyun Moon
(university of Nevada Las Vegas)
In this presentation we demonstrate molecular beam epitaxy (MBE) based growth of highly resistive AlSb on Silicon substrates. AlSb a compound semiconductor with good potential for making room-temperature radiation detectors due to antimony’s high atomic number (Sb = 51), a reasonably wide bandgap of 1.6 eV and high room temperature carrier mobility for both electrons and holes. The study will include the growth of AlSb on miscut silicon substrates using the interfacial misfit dislocation growth mode. This allows for the simultaneous accommodation of the large mismatch between the substrate and the epilayer while also suppressing antiphase domains. The result is a low threading dislocation AlSb layer that can be grown up to 10 µm thick with minimized threading dislocations and thermal expansion coefficient mismatch. The presentation will include high resolution transmission electron microscopy, hall measurements, X-Ray diffraction studies, microwave photoconductive decay studies, and diode analysis.
*This material is based upon work supported by the Department of Energy/National Nuclear Security Administration under Award Number DE-NA0004008.
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