Bulletin of the American Physical Society
2023 APS March Meeting
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session S40: Other Defects
8:00 AM–10:00 AM,
Thursday, March 9, 2023
Room: Room 232
Sponsoring
Unit:
DMP
Chair: Sieun Chae, University of Michigan
Abstract: S40.00006 : Spin Dependent Transient Spectroscopy*
9:00 AM–9:12 AM
Presenter:
Kenneth J Myers
(Northrop Grumman Corporation)
Authors:
Kenneth J Myers
(Northrop Grumman Corporation)
Patrick M Lenahan
(Pennsylvania State University)
James P Ashton
(Keysight Technologies)
Jason T Ryan
(NIST)
Two techniques have long been the leading approaches for understanding the fundamental properties of point defects in semiconductor devices: electrically detected magnetic resonance (EDMR) [1] and deep level transient spectroscopy (DLTS). EDMR identifies the physicochemical nature of electrically active defects while DLTS determines their capture/emission rates and energy levels. Chen and Lang utilized the combination of these techniques in order improve their analytical power, albeit in a somewhat limited capacity [2]. We have developed a technique that expands their work which we call spin-dependent transient spectroscopy; utilizing EDMR combined with the surface-potential-scanning methods of DLTS in order to probe the energy-depth of interfacial point defects. In this work, we provide proof-of-concept results on Si/SiO2 metal-oxide-semiconductor capacitors. We find that we can isolate and identify the chemistry of oxide/semiconductor defects as well as determine their density of states with high sensitivity, utilizing only the trapping mechanism of a single charge carrier.
References
[1] J. P. Campbell and P. M. Lenahan, Density of States of Pb1 Si/SiO2 Interface Trap Centers, Appl. Phys. Lett. 80, 1945 (2002).
[2] M. C. Chen and D. V. Lang, Observation of Spin-Dependent Thermal Emission from Deep Levels in Semiconductors, Phys. Rev. Lett. 51, 427 (1983).
*This work has been supported by the Defense Threat Reduction Agency under Grant No. HDTRA1-18-0012 and the Air Force Office of Scientific Research under Award No. FA9550-17-1-0242. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred.
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