Bulletin of the American Physical Society
2023 APS March Meeting
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session D57: Spin Dependent Transport II
3:00 PM–5:48 PM,
Monday, March 6, 2023
Room: Room 303
Sponsoring
Unit:
GMAG
Chair: Stuart Calder, Oak Ridge National Laboratory
Abstract: D57.00001 : Emergence of asymmetric skew-scattering dominated anomalous Nernst effect in spin gapless semiconductors Co1+xFe1-xCrGa*
3:00 PM–3:12 PM
Presenter:
Amit Chanda
(University of South Florida)
Authors:
Amit Chanda
(University of South Florida)
Deepika Rani
(Indian Institute of Technology, Delhi)
Jadupati Nag
(Indian Institute of Technology Bombay)
Aftab Alam
(Indian Institute of Technology Bombay)
K. G Suresh
(Indian Institute of Technology Bombay)
Manh-Huong Phan
(Univ of South Florida)
Hariharan Srikanth
(University of South Florida)
Heusler alloy-based spin gapless semiconductors (SGSs) with very high Curie temperatures (TC) have recently gained enormous attention because of their unconventional electronic structures. They exhibit a zero band gap in one of the spin channels and a non-zero band gap in the other spin channel, making them a promising class of materials for tunable spin transport. Here, we report the first ever experimental observation of anomalous Nernst effect (ANE) in Co1+xFe1−xCrGa (x = 0, 0.2, 0.4, and 0.5), which are the emerging quaternary Heusler alloy-based SGSs (Phys. Rev. B 99, 104429 (2019)). Our findings reveal that the electron-electron elastic scattering and the disorder mediated weak localization effect play the major roles in electrical transport for all the samples at low temperatures, whereas the magnon-drag effect dominates the longitudinal thermoelectric transport. The ANE coefficient at room temperature increases from ≈ 0.018 μV. K-1 for <!--[if gte msEquation 12]> style='mso-bidi-font-style:normal'>x=0 to ≈ 0.063 μV. K-1 for <!--[if gte msEquation 12]> style='mso-bidi-font-style:normal'>x=0.5 , which is higher than that for Ni81Fe19 and compressively strained SrRuO3 films. Furthermore, the ANE coefficient decreases gradually with lowering temperature for all the samples. Our analysis indicates that the observed ANE in these samples originates from asymmetric skew-scattering of charge carriers.
*Financial support by the US Department of Energy, Office of Basic Energy Sciences, Division of Materials Science and Engineering under Award No. DE-FG02-07ER46438 is gratefully acknowledged.
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