Bulletin of the American Physical Society
2023 APS March Meeting
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session B41: Defects in Gallium Oxide
11:30 AM–2:18 PM,
Monday, March 6, 2023
Room: Room 319
Sponsoring
Unit:
DMP
Chair: Jorge Munoz, University of Texas at El Paso
Abstract: B41.00007 : Uniform and controlled Si doping of Ga2O3 by disilane via hybrid molecular beam epitaxy*
1:06 PM–1:18 PM
Presenter:
Zhuoqun Wen
(University of Michigan)
Authors:
Zhuoqun Wen
(University of Michigan)
Elaheh Ahmadi
(University of Michigan)
Kamruzzaman Khan
(University of Michigan)
In this work, we propose using diluted disilane (Si2H6/N2) in a hybrid MBE to obtain Si-doped Ga2O3. In this approach, instead of using traditional solid Si as the precursor, a gas source of Si, disilane (Si2H6), is introduced to avoid the oxidation of Si during the growth. By using diluted disilane, we have achieved a wide range of Si doping concentrations from low 1016 cm-3 to 1019 cm-3 with a uniform doping profile. The room temperature electron mobility was measured to be ~130 cm2/Vs for an electron concentration of 3 × 1017 cm-3. Atomic force microscopy (AFM) images show smooth surface morphologies. Silicon and Hydrogen incorporation was measured using secondary ion mass spectrometry (SIMS). The hydrogen incorporation remained similar to that in unintentionally doped films. This is the first time that disilane has been successfully used for the Si-doping of Ga2O3 by MBE.
*Thanks Air Force Office of Scientific Research (AFOSR) for supporting this research project.
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