Bulletin of the American Physical Society
APS March Meeting 2021
Volume 66, Number 1
Monday–Friday, March 15–19, 2021; Virtual; Time Zone: Central Daylight Time, USA
Session R59: Materials SynthesisLive
|
Hide Abstracts |
Sponsoring Units: FIAP Chair: Hao Zeng, State Univ of NY - Buffalo |
Thursday, March 18, 2021 8:00AM - 8:12AM Live |
R59.00001: Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics Xiucheng Wei, Haolei Hui, Mengjiao Han, Samanthe Perera, Junhao Lin, Yi-Yang Sun, Shengbai Zhang, Hao Zeng BaZrS3 belongs to an emerging class of unconventional semiconductor. It is more ionic than conventional compound semiconductors while more covalent than oxide and halide perovskites. Recent publications on powder samples reveal that it has a direct band gap of 1.7-1.8 eV, a high stability against moisture and pressure, and a very strong interaction with light. However, the lack of thin film samples has become the major roadblock in fundamental studies and device applications. Here we report the fabrication of BaZrS3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition (PLD). We show that films fabricated by this method are n-type with carrier density in the range of 1019-1020 cm-3. The Hall mobility ranges from 2.1 to 13.7 cm2/Vs depending on processing temperature. The optical absorption coefficient is greater than 105 cm-1 at photon energy greater than 1.97 eV. Temperature dependent conductivity measurements suggest shallow donor levels. Although un-optimized, these material parameters suggest that BaZrS3 thin films are promising for optoelectronic applications. |
Thursday, March 18, 2021 8:12AM - 8:24AM Live |
R59.00002: Antisite Defects Formation in LaMO3 (M=Mn, Fe, Ni, and Co) predicted by Fixed-node Diffusion Monte Carlo Method Tom Ichibha, Kayahan Saritas, Jaron Krogel, Fernando A Reboredo The properties of transition-metal perovskite crystals are significantly affected by point defects. Therefore, their introduction could potentially tune perovskite crystals for various applications. The most studied defects are the oxygen vacancy and substitutional impurity defects in the La and transition metal sites. In this work, we show theoretically that a transition metal atom at the La site can be formed under certain growth conditions. Using density functional theory (DFT) and fixed-node diffusion Monte Carlo (DMC) methods, we report results for LaMO3 (M=Mn, Fe, Ni, and Co). In addition, we study magnetism in non-defective perovskite crystals. We establish that only DMC reproduces the experimentally found antiferromagnetic ground state in LaFeO3, but DFT with PBE and SCAN functionals both predict ferromagnetic ground state. |
Thursday, March 18, 2021 8:24AM - 8:36AM Live |
R59.00003: Synthesis and Structural, Crystallographic, Electronic, Chemical and Optical characterizations of Alpha-Diisopropylammonium Bromide (α-DIPAB) Thin Films Ahmad Alsaad, Qais M. Al-Bataineh, Areen Bani-Salame, A. A. Ahmad, B. A. Albiss, Ahmad Telfah, Renat Sabirianov Thin films of the molecular organic ferroelectric diisopropylammonium bromide (DIPAB) have been grown by the slow evaporation technique. We report on the synthesis and characterization of as-grown Alpha-Diisopropylammonium Bromide (α-DIPAB) thin films. In particular, structural, crystallographic, electronic, chemical, and optical properties are measured and interpreted. To elucidate structural and crystallographic properties, X-ray diffraction (XRD) measurements are conducted to reveal that α-DIPAB thin film is polycrystalline and exhibits monoclinic structure. Generalized Gradient Approximation (GGA) and HSE06 hybrid functional methods are employed to calculate band structure and density of states of thin films. Taking into account the Van der Waals forces, HSE06 method yields an optical band gap (≈ 6 eV). Scanning Electronic Microscopy (SEM) micrographs demonstrate that thin-film surface cracks appear dividing the surface into ice land-like regions. |
Thursday, March 18, 2021 8:36AM - 8:48AM Live |
R59.00004: Characterizing Surface Energetics of Wafer Bonding of LiTaO3 to Si and SiO2 via Three Liquid Contact Angle Analysis (3LCAA) and Gibbs Free Energy Shefali Prakash, Mohammed Sahal, Abbie Elison, Srivatsan Swaminathan, Riley Rane, Brian Baker, Robert J Culbertson, Nicole Herbots Monolithic integration of piezoelectrics is key in the Internet of Things. |
Thursday, March 18, 2021 8:48AM - 9:00AM Live |
R59.00005: Structural phase diagram of doped HfO2 bulk single crystal Xianghan Xu, Fei-Ting Huang, Yubo Qi, Sobhit Singh, Karin M Rabe, Dimuthu Obeysekera, Junjie Yang, M.-W. Chu, Sang-Wook Cheong HfO2-based materials attract a lot of research interest because the rich polymorphism, including several metastable phases, results in intriguing physics properties and potential for applications. However, the absence of certain phases in the bulk sample hinders a deeper understanding. Here, we report that the high-quality HfO2 single crystals have been successfully grown by a state-of-the-art laser-diode-heated floating zone (LDFZ) technique. Metastable phases have been stabilized, which is sensitive to dopants and thermal treatments. X-ray, TEM, and neutron diffraction are performed for a comprehensive structural phase diagram. DFT calculations elucidate the energy paths of phase formation and emphasize the crucial factors in the stabilization of metastable phases. Our study of bulk HfO2 single crystals uniquely unveils the rich structural physics, including domain and domain wall nature, and paves a new essential road for future study of HfO2-based materials. |
Thursday, March 18, 2021 9:00AM - 9:12AM Live |
R59.00006: Study of Electrical and Optical Properties of Al-doped ZnO Nanoparticles Bishwajite Karmakar, Rifat Shams, Sajal Islam, M.F.N. Taufique, Ariful Haque, Kartik Ghosh ZnO-based transparent conducting oxide has become a promising material in the replacement of ITO due to its large band gap (Eg =3.37 eV) with high transmittance and availability in the nature. Naturally, due the oxygen vacancy ZnO is a n-type material. However, it has very low electrical conductivity which makes difficult to use it as a conducting layer. In this work, opto-electronic properties are tuned by doping Zn2+ with a trivalent Al atom in ZnO. With the doping of Al3+, the total no of charge carrier increases, so conductivity of the resultant material escalates. The sol-gel method has been used to prepare Al doped ZnO NPs. AlCl3.6H2O were added in 0.5 M Zinc nitrate solution until dopant concentration become 5% and reacted with the aqueous solution of NaOH until the pH becomes 12.50. The final solution was used for spin coating on the glass substrate. After spin coating, the sample was put into a microwave to synthesize Al doped ZnO NPs at room temperature. The structural, composition and surface properties were investigated by XRD, Raman spectroscopy, and SEM-EDX. The optical properties have been investigated using PL and UV-VIS spectroscopy. I-V curve & hall measurement confirms the Al doping into ZnO NPs crystal. |
Thursday, March 18, 2021 9:12AM - 9:24AM Live |
R59.00007: Molybdenum Disulfide Film Growth by Chemical Vapor Deposition with Facial Treated Substrates Yan Jiang, Usha Philipose We demonstrate atmospheric pressure CVD growth of large domains of molybdenum disulfide (MoS2) monolayers and multilayers in the presence of an alkali salt like sodium chloride (NaCl) that serves as a seeding promoter. The pre-treatment of the growth substrates with NaCl and the Mo-precursor prior to the start of the MoS2 film growth affects the growth kinematics and influences the lateral dimensions of the film and its morphology. Using the FactSage software, the role of NaCl in determining the partial pressures of Mo- and S-based compounds in gaseous phase at the growth temperature is elucidated. Under ideal conditions, nucleation is suppressed, and domains are enlarged, resulting in large area growth of MoS2 monolayers. These monolayers were found to be free of unintentional doping with alkali metal and halogen atoms and exhibit high crystallinity and optoelectronic quality. Field-effect measurements of these films in back-gated devices result in an ON/OFF current ratio of the order of 105. |
Thursday, March 18, 2021 9:24AM - 9:36AM Live |
R59.00008: Polymorphism and Cation Disorder in MgSnN2 Annie Greenaway, Amanda L Loutris, Rekha Schnepf, Karen Heinselman, Allison Mis, Celeste Melamed, Rachel Woods-Robinson, Jesse M Adamczyk, Marshall Brooks Tellekamp, Rachel Sherbondy, Dylan Bardgett, Sage Bauers, Andriy Zakutayev, Steven Christensen, Stephan Lany, Adele Tamboli New paradigms for property control are emerging as semiconductor research expands to ternary materials. II-IV-N2 compounds, structural analogs of III-Ns, exhibit cation lattice site disorder that can tune the bandgap and other properties. Here, we investigate MgSnN2, a II-IV-N2 with two accessible polymorphs and cation disorder. We use combinatorial co-sputtering to form wurtzite MgSnN2 up to 500 °C and a metastable, secondary rocksalt phase up to 200 °C. Rocksalt MgSnN2 has a wide, indirect bandgap and large dielectric constant; wurtzite MgSnN2 has an ordered bandgap of ~2.3 eV which is reduced by cation disorder, confirmed by spectroscopic ellipsometry. We also grow mixed wurtzite/rocksalt MgSnN2 heteroepitaxially on GaN at 400 °C. Rocksalt MgSnN2 is promoted by a close lattice match to GaN along the hexagonal close-packed plane. We utilize this close match in ongoing work investigating cation ordering in rocksalt MgSnN2 using post-growth annealing. This work enables integration of cation ordering and polymorph formation, uniting existing methods of controlling semiconductor properties with emerging tools. |
Thursday, March 18, 2021 9:36AM - 9:48AM Live |
R59.00009: Growth and exploration of new p-block rich intermetallics Tiglet Besara, Sudha Krishnan, Sarah Longworth, Julio Sarmiento Growing and exploring new materials is crucial for the advancement of modern technology, and intermetallics are attractive due to their wide variety of properties, such as, e.g., superconductivity, topology, magnetism, thermoelectricity, etc. We focus on using p-block elements as a flux for growth of single crystals and have successfully synthesized materials such as SmMnBi2, Sm2Mn13Bi5, CoxMn1-xGa3, and Cu7Nb3Zn10. Here, we report on the synthesis, characterization, and exploration of properties of these new materials. |
Thursday, March 18, 2021 9:48AM - 10:00AM Live |
R59.00010: Optical Spectroscopic and Gain Properties of II-VI Heterostructures for Semiconductor Disk Laser Application ahamed jubair, Kuaile Zhao, Vladimir Kartazayeu, Maria C Tamargo, Swapan K Gayen Semiconductor Disk Lasers (SDLs) operating in the 480-630 nm spectral range are of interest for a variety of applications. We report on the synthesis, structural properties, as well as optical spectroscopic and gain characteristics of ZnCdSe/ZnCdMgSe multiple quantum well (MQW) structures grown lattice matched on InP substrates using molecular beam epitaxy (MBE) for potential SDL operation in the green-yellow spectral range. Linear 2θ-ω x-ray diffraction scans revealed excellent crystalline quality of the samples. Under steady-state and low-power pulsed excitations bright photoluminescence (PL) was observed with peak around 565 nm and a room-temperature lifetime of ~ 1 ns. Under more intense ultrashort pulsed excitation, time-resolved PL measurement with a streak camera revealed stimulated emission at longer wavelengths, spectral narrowing and lifetime shortening to ~ 100 ps. For optical gain measurements, the InP substrate was removed by selective chemical etching and MQW structures were placed on a transparent sapphire plate. Optical gain characteristics were studied using an excite-and-probe scheme. The gain spectra correlate with stimulated emission spectra. |
Thursday, March 18, 2021 10:00AM - 10:12AM Live |
R59.00011: Synthesis of Few-Layer Thick Molybdenum Disulfide (MoS2) Films and Crystals via Low Pressure Chemical Vapor Deposition (LPCVD) Daniel Choi, Evgeniya Hristova Lock Molybdenum disulfide (MoS2) is an attractive material for quantum emission research due to the emergence of single photon emission from exciton traps in the defect sites of mono- to few-layers thin structures. As such, a deliberate defect-site engineering on two-dimensional MoS2 films allows for realization of a scalable, site-selective quantum emission platform for applications in quantum information processing and quantum key distribution. Therefore, a low-cost, high-throughput synthesis of high-quality material is essential for the next technological breakthrough. In this report, we present low pressure chemical vapor deposition (LPCVD) approach as well as material characterizations of MoS2 films and crystals. A systematic optimization of the growth parameters, such as precursor powders quantity, the distance between precursors, and the substrate orientation relative to the argon flow, resulted in varying MoS2 films thickness as well as crystal distribution. The presented work provides the basis not only for the MoS2 growth technology, but also for other transition metal dichalcogenides materials. |
Thursday, March 18, 2021 10:12AM - 10:24AM Live |
R59.00012: Atomistic Mechanism of MoS2 Oxidation Induced by Reactive Superoxide and Ozone Treatment: A First-principles Study Min Jong Noh, Muhammad Ejaz Khan, Yong-Hoon Kim While two-dimensional transition metal dichalcogenides (TMDCs) are emerging as promising candidates for next-generation microelectronic and other technologies, the oxidation and degradation effects on TMDCs with the atomic-scale thicknesses remain a significant bottleneck for their practical applications. Despite its significance, an atomic-scale understanding of oxidation mechanism on TMDCs is yet largely underexplored. Herein, carrying out standard density functional theory and room-temperature ab-initio molecular dynamics calculations, we systematically explore the oxidation mechanism in monolayer as well a few-layer MoS2 under different gaseous environment such as containing regular oxygen (O2), superoxide (O2-), and ozone molecule (O3). We propose plausible pathways for SO2 formation wherein O2- and O3 readily form SO2, however, O2 has a high adsorption barrier of 1.96 eV on MoS2 surface. We also find that the bending and opening the edges is the key step that allows the self-limiting layer-by-layer oxidation of MoS2 and identify an easier penetration of O2- into the open interlayer region bearing small energy barrier compared to O2. Our findings may provide the mechanistic importance of controlling TMDCs heterostructures and the strategies to prevent the oxidation of TMDCs. |
Thursday, March 18, 2021 10:24AM - 10:36AM Not Participating |
R59.00013: Effect of Scandium Nitride Film Orientation on Growth and Electrical Properties Amber Reed, John Cetnar, Tyson Back, Hadley Smith, Zach Biegler, David C Look Scandium nitride (ScN) is a rock-salt semiconductor with potential as a complimentary material to enhance gallium nitride (GaN) performance in high-power and high-speed electronic applications. Electron mobilities as high as 130 cm2/(V*s) have been reported for (100)-ScN on (100)-magnesium oxide (MgO) substrates. The values reported for (111)-ScN on GaN or sapphire, however, are significantly lower. The mechanism responsible for the poorer transport properties of (111)-ScN has not to date been identified. In this work, we investigate the effect of ScN orientation on film growth, composition and electrical properties. A series of thin ScN films were deposited on (111)-, (110)- and (100)-MgO substrates using reactive magnetron sputtering. X-ray diffraction and atomic force microscopy showed that ScN crystallinity and surface morphology were dependent on the MgO substrate. Secondary ion mass spectroscopy showed negligible differences in oxygen concentration but variation in fluorine and hydrogen concentrations. Temperature-dependent Hall-effect measurements showed that ScN electrical properties were dependent on film orientation. |
Thursday, March 18, 2021 10:36AM - 10:48AM Live |
R59.00014: Reduced temperature preparation of atomically clean Si surfaces to augment CMOS with atomic precision devices Evan Anderson, Luis Fabian Pena, John Mudrick, DeAnna Campbell, Aaron Katzenmeyer, Lisa A Tracy, Tzu-Ming Lu, Andrew J. Leenheer, Jeffrey A. Ivie, Scott W. Schmucker, David Scrymgeour, Shashank Misra Atomic precision advanced manufacturing (APAM) of electronic devices enables exploration of unique device physics by producing atomically abrupt doping profiles where the dopant density exceeds the solid solubility limit in silicon. Thus, APAM is appealing to augment complementary metal-oxide-semiconductor (CMOS) devices and sidestep scaling limits. The challenge to integrating APAM with CMOS is thermal – preparing the necessary atomically clean Si surface normally occurs above 850°C, which would destroy many CMOS elements. Here we demonstrate a suitably clean Si surface for APAM, prepared below 600°C, that is compatible with the middle of a CMOS process flow. Through electronic testing and materials characterization, we show high carrier concentrations and low impurity concentrations that are comparable to those from high temperature surface cleans. |
Thursday, March 18, 2021 10:48AM - 11:00AM On Demand |
R59.00015: Properties of Zinc-based Magnetic Nanoparticle Prepared by Co-Precipitation Technique Abideen A Ibiyemi, Gbadebo Yusuf This research presents the structural and viscoelastic analysis of Zinc-based ferrite magneto rheology fluid (MR) (ZnFe2O4) nanoparticle synthesized by chemical co-precipitation technique. The structural properties revealed a single-phase cubic spinel with narrow diffraction peaks confirming the particle at nano-dimension with an average crystallite size of 9.02 nm. The Energy Dispersive X-ray Spectroscopy of ZnFe2O4 nanoparticle revealed 100% pure ZnFe2O4 indicating that there is no presence of an impurity in the fluid. SEM image revealed fairly porous layers showing that the particles are well compacted with no surface damage or fracture; the morphology showed closely parked nanoparticles devoid of pores and cavity. The magneto viscoelastic performance of the fluid was evaluated under the magnetic influence of 0, 0.475 T, and 1.076 T and shear rates of 100 s-1, 200 s-1 and 300 s-1. The viscoelastic properties show various degrees of response with the application of different magnetic fields. The figure of merit increases as the shear rate increases; the result indicates improved shear thinning characteristics as well as non-Newtonian behavior at the figure of merit of the order 106 when the shear rate is 300 S-1. |
Follow Us |
Engage
Become an APS Member |
My APS
Renew Membership |
Information for |
About APSThe American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics. |
© 2024 American Physical Society
| All rights reserved | Terms of Use
| Contact Us
Headquarters
1 Physics Ellipse, College Park, MD 20740-3844
(301) 209-3200
Editorial Office
100 Motor Pkwy, Suite 110, Hauppauge, NY 11788
(631) 591-4000
Office of Public Affairs
529 14th St NW, Suite 1050, Washington, D.C. 20045-2001
(202) 662-8700