Bulletin of the American Physical Society
APS March Meeting 2021
Volume 66, Number 1
Monday–Friday, March 15–19, 2021; Virtual; Time Zone: Central Daylight Time, USA
Session M53: Defects in DiamondFocus Live
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Sponsoring Units: DMP DCOMP FIAP Chair: Matthew McCluskey, Washington State Univ |
Wednesday, March 17, 2021 11:30AM - 11:42AM Live |
M53.00001: Investigation of Stark shift and charge noise on a centrosymmetric diamond defect Lorenzo De Santis, Matthew Trusheim, Kevin C Chen, Dirk R. Englund Quantum emitters in diamond are among the most promising systems for the realization of optically accessible qubits in the solid state. Group IV-vacancy defect centers in particular have attracted great interest owing to their inversion symmetry, which is expected to provide coherent and stable optical interfaces. |
Wednesday, March 17, 2021 11:42AM - 11:54AM Live |
M53.00002: Calculating the Hyperfine Tensors for Group IV Impurity-Vacancy Centers in Diamond: A Hybrid Density-Functional Theory Approach Rodrick Kuate Defo, Efthimios Kaxiras, Steven L Richardson The hyperfine interaction has been shown to mediate entanglement between electronic spins and surrounding nuclear spins. This entanglement leads to proximal nuclear spins enhancing electronic spin coherence and distant nuclear spins destroying it. Building on earlier work investigating the thermodynamic and kinetic effects of carbon vacancies on Group IV color centers,1 we calculate the hyperfine interaction strength at the 13C nuclei neighboring the Group IV color centers (XV- color centers, where X = Si, Ge, Sn, or Pb and V is a carbon vacancy) . We show in this work that when XV- color centers exhibit a Jahn-Teller distortion, the result is an anisotropic distribution of the hyperfine interaction strength among the neighboring 13C nuclei. The implications of these results are discussed to show how one can mitigate the spin decoherence caused by the interactions between XV- color centers and the 13C nuclei. |
Wednesday, March 17, 2021 11:54AM - 12:06PM Live |
M53.00003: Nuclear Magnetic Resonance of Nano-scale Quantum Materials detected by Nitrogen Vacancy Ensembles in Diamond Jacob Henshaw, Pauli Kehayias, Maziar Saleh Ziabari, Tzu-Ming Lu, Sergei Ivanov, Edward Bielejec, Michael P Lilly, Andrew M Mounce Nitrogen-Vacancy defect centers (NV) in diamond extend many of the analytical strengths of nuclear magnetic resonance (NMR) to nano- and microscale systems. NV magnetometry could provide new insights into nano-scale electronic states in quantum materials, such as low dimensional superconductors, semiconductors, 2D Van Der Waals materials. However, each material provide unique challenges for integration and measurement with NV diamonds. Here, we present sensitivity optimization for near surface NV ensembles and considerations for target nuclear isotopes. We characterize impact of layer thickness and depth of the NV layer on NV NMR. We also perform calculations and experiments to determine the impact of metal-insulator interfaces on the NV Centers and their magnetic sensitivity. Finally, we present results on the detection of NMR standards and methodology to integrate novel materials with NV ensemble implanted diamond to provide the optimal SNR for NV detected NMR. |
Wednesday, March 17, 2021 12:06PM - 12:18PM Live |
M53.00004: Engineering highly coherent shallow Nitrogen Vacancy centers with long coherence times for biosensing experiments Lila Rodgers, Suong Nguyen, Sorawis Sangtawesin, Simon A Meynell, Alastair Stacey, Jared Rovny, Zhiyang Yuan, Mattias V Fitzpatrick, Lillian Hughes, Pat Gumann, Cherno Jaye, Conan R Weiland, Lars Thomsen, Bruce Cowie, Ania Claire Jayich, Robert Knowles, Nathalie De Leon Nitrogen vacancy (NV) centers are point defects in diamond that can be used to sense magnetic fields at room temperature, making them an attractive platform for nanoscale biosensing. For such experiments, NV centers need to be within a few nanometers of the target molecules. Therefore, NV centers must be close to the diamond surface, and the molecules must be immobilized above the NV center. Currently, these experiments are limited by two major issues. First, diamond surfaces host magnetic and electric noise, which degrades the coherence of shallow NV centers. Second, there are no chemical methods to functionalize the diamond surface to attach a wide range of large, fragile molecules of interest. To address these challenges, we built an ultra-high vacuum cluster tool that combines surface preparation and characterization with NV spin measurements. This highly controlled environment allows us to create pristine diamond surfaces with new surface chemistries and measure the impact on shallow NV center coherence without breaking vacuum. In addition, we explore the utility of these surface chemistries for gentle wet chemical functionalization to attach molecules to the diamond surface for nanoscale sensing applications. |
Wednesday, March 17, 2021 12:18PM - 12:30PM Live |
M53.00005: Optically detected magnetic resonance in neutral silicon vacancy centers in diamond via bound exciton states Zihuai Zhang, Paul Stevenson, Gergö Thiering, Brendon Rose, Ding Huang, Andrew Edmonds, Matthew Markham, Stephen Aplin Lyon, Adam Gali, Nathalie De Leon Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. In this talk, I will discuss the realization of optically detected magnetic resonance and coherent control of SiV0 centers at cryogenic temperatures, enabled by efficient optical spin polarization via previously un-reported higher-lying excited states. We assign these states as bound exciton states using group theory and density functional theory. These bound exciton states enable new control schemes for SiV0 as well as other emerging defect systems. |
Wednesday, March 17, 2021 12:30PM - 12:42PM Live |
M53.00006: Demonstration of NV-detected Electron Spin Resonance at 4.2 Tesla Benjamin Fortman, Yuxiao Hang, Noah Tischler, Susumu Takahashi The nitrogen-vacancy (NV) center is an excellent candidate for single-spin electron spin resonance (ESR) due to its unique optical properties and high sensitivity to external magnetic fields [1]. High magnetic fields enable ESR spectroscopy with improved spin polarization, increased control over spin dynamics, improved insight into molecular motion, and high spectral resolution. The increased resolution enables investigation of complex systems with similar g values. For example, a field of 4.2 Tesla would provide clear spectral separation of external nitroxide spin labels from the featureless “g=2” signal often seen for shallow NV centers. Within this talk we present our recent demonstration of NV-detected ESR from both single and ensemble NV spin systems at the highest magnetic field to date, 4.2 Tesla [2]. In addition, we discuss developments in external spin detection using NV-detected ESR at high magnetic fields. |
Wednesday, March 17, 2021 12:42PM - 12:54PM Live |
M53.00007: Transport of photogenerated carriers between individual NV centers in diamond Artur Lozovoi, Damon Daw, Gyorgy Vizkelethy, Edward Bielejec, Harishankar Jayakumar, Carlos Meriles Spin-active color centers in semiconductors have emerged as a promising platform for quantum sensing and quantum communication. Exceptional spin properties of nitrogen vacancy center in diamond present it as one of the most suitable candidates for these applications. Importantly, the interplay between its spin and charge state is a crucial aspect of the ability to coherently manipulate these color centers1. In this work, we articulate protocols for precise control over the charge state and photoionization of single NV centers implanted in bulk pure diamond. Building on this, for the first time, we demonstrate transport of photogenerated charge carriers between two individual NVs over the distance of several micrometers. We are able to establish a correlation between the spin state of the "source" NV center and the charge state of the "target" NV center using the spin-dependent carrier photogeneration. Having characterized properties of the observed transport, we explore the possibilities of utilizing the proposed platform as a way of communication between spatially separated NV-based qubits. |
Wednesday, March 17, 2021 12:54PM - 1:06PM Live |
M53.00008: Density Functional Theory Study of the Surface Coverage of H, OH, and O Functional Groups on Diamond (100) Surfaces Jenille Cruz, Michael Groves, Mahesh R Neupane, Dimtry Ruzmetov, A. Glen Birdwell, James Weil, Pankaj Shah, Tony Ivanov Diamond has unique geometric and electronic properties that make it superior to other semiconductors. It can be used for many device applications, such as RF field-effect transistors, power amplifiers, and gas sensors. Since the bulk diamond exhibit insulating properties, diamond surfaces with (100) phase are widely used for electronic applications. When diamond (100) surfaces are terminated with hydrogen- or oxygen-related species, the electrochemical properties are changed by using various degrees of surface coverage. In this research, various degrees of surface coverage of H, OH, and ether groups terminated on the top carbon layer of diamond (100) surfaces were computationally studied using Density Functional Theory (DFT). The adsorption energies were calculated to predict the most favorable type and coverage. The band structures and density of states were determined to explain the electronic properties of each terminating system as the amount of adsorbate types vary. Our results provides an insight into the feasible models of H- and O-terminating species adsorbed on diamond (100) surfaces observed in the experiment. Our theoretical findings will also provide critical pathway to enhance the surface properties of the diamond surfaces for RF device applications. |
Wednesday, March 17, 2021 1:06PM - 1:42PM Live |
M53.00009: Defects for quantum engineering Invited Speaker: Lee Bassett Certain point defects in semiconductors exhibit quantum-mechanical features comparable to isolated atoms or molecules, in a solid-state materials platform amenable to nanofabrication, heterointegration with other materials and classical devices, and large-scale system engineering. Well-known quantum point defects such as the diamond nitrogen-vacancy center are leading candidates as robust quantum memories, versatile quantum sensors, and efficient light-matter interfaces. Meanwhile it is increasingly clear that alternative materials and defect systems offer potential advantages and new capabilities for quantum science [1]. However, millions of potential defects exist, and their identification is often tedious and challenging. This talk will introduce the opportunities and challenges of identifying point defects, including several new approaches to efficiently predict, characterize, and engineer their properties for quantum science and technology. |
Wednesday, March 17, 2021 1:42PM - 1:54PM Live |
M53.00010: Reduction of surface spin-induced electron spin relaxations in nanodiamonds Yuxiao Hang, Ana Gurgenidze, Benjamin Fortman, Zaili Peng, Susumu Takahashi Nanodiamonds (NDs) hosting nitrogen-vacancy (NV) centers are promising for applications of quantum sensing. Long spin relaxation times (T1 and T2) are critical for high sensitivity in quantum applications. Our recent study has shown the presence of surface impurities such as dangling bonds and graphite layers [1]. It has also been shown that fluctuations of magnetic fields due to surface spins strongly influence the spin relaxation times in NDs. In this presentation, we discuss the improvement of T1 and T2 of single-substitutional nitrogen impurity (P1) centers in NDs by removing the surface spins [2]. By employing high-frequency electron paramagnetic resonance spectroscopy, we verify that the etching of NDs removes surface spins efficiently and significantly reduces their contribution to T1. We also discuss T1 and T2 of NV centers in etched NDs. |
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