Bulletin of the American Physical Society
APS March Meeting 2021
Monday–Friday, March 15–19, 2021; Virtual; Time Zone: Central Daylight Time, USA
Session C35: Advances in Spin Transport and Proximity Near Nanoscale Interfaces and Materials
3:00 PM–6:00 PM,
Monday, March 15, 2021
Sponsoring Unit: GMAG
Chair: Michael Flatté, Univ of Iowa
Abstract: C35.00003 : Theory of oblique-field magnetoresistance from spin centers in three-terminal spintronic devices*
4:12 PM–4:48 PM
(Univ of Evansville)
(Univ of Evansville)
We present a general stochastic Liouville theory of electrical transport across a barrier between two conductors that occurs via sequential hopping through a single defect's spin-0 to spin-1/2 transition. We find magnetoresistance features to the Hanle effect but in fact originate from Pauli blocking and not spin accumulation . We also predict that evolution of the defect's spin modifies the conventional Hanle response, producing an inverted Hanle signal. Three terminal measurements with oblique magnetic fields  provide a means to delineate the two mechanisms. By comparing responses at different field angles, we can rule out effects of surface roughness induced magnetic fields on the response. Lastly, ramifications of the interfacial defects on non-local (four terminal) measurements are examined.
This work was done in collaboration with Michael E. Flatte.
 R. Jansen et al., Semicond. Sci. Technol. 27, 083001 (2012)
 Y. Song and H. Dery, Phys. Rev. Lett. 109, 047205 (2014)
 H. Inoue, et al., Phys. Rev. X 6, 041023 (2015)
 N. J. Harmon and M. E. Flatte arXiv:2008.05623
 S. He, et al., J. Appl. Phys. 119, 113902 (2016)
*The solution of these problems, comparison with experiment, and key results were supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Award Number DE-SC0016379. The formulation of this problem and initial results were supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.
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