Bulletin of the American Physical Society
APS March Meeting 2020
Volume 65, Number 1
Monday–Friday, March 2–6, 2020; Denver, Colorado
Session P57: Electronic and Optical Properties of 2D Materials III
2:30 PM–5:18 PM,
Wednesday, March 4, 2020
Room: Mile High Ballroom 3A
Sponsoring
Unit:
DMP
Chair: Wencan Jin, Auburn University
Abstract: P57.00009 : Correlating 3D atomic defects and electronic properties of 2D transition metal dichalcogenides with picometer precision*
Presenter:
Xuezeng Tian
(University of California, Los Angeles)
Authors:
Xuezeng Tian
(University of California, Los Angeles)
Dennis S Kim
(University of California, Los Angeles)
Shize Yang
(Oak Ridge National Laboratory)
Christopher Ciccarino
(Harvard University)
Yongji gong
(Rice University)
Yongsoo Yang
(University of California, Los Angeles)
Yao Yang
(University of California, Los Angeles)
Blake Duschatko
(Harvard University)
Yakun Yuan
(University of California, Los Angeles)
Pulickel M Ajayan
(Rice University)
Juan-Carlos Idrobo
(Oak Ridge National Laboratory)
Prineha Narang
(Harvard University)
Jianwei Miao
(University of California, Los Angeles)
Here, we developed scanning atomic electron tomography (sAET) to localize the 3D atomic coordinates in 2D materials and heterostructures with picometer precision. Using a Re-doped MoS2 monolayer sample, we demonstrated a general sAET method to overcome several limitations and determined the 3D coordinates of individual atoms with precision down to 4 pm. We identified 3D crystal defects such as dopants, vacancies and atomic-scale ripples and measured the 3D atomic displacement and the full strain tensor of the Re-doped MoS2. Furthermore, the experimental 3D atomic coordinates were used as direct input to DFT to correlate crystal defects with the electronic band structure at the single-atom level.
sAET is generally applicable to the determination of the 3D atomic coordinates of various 2D materials, heterostructures and thin films.
*DOE: DE-SC0010378; STROBE: DMR-1548924; NSF: DMR-1437263; MURI:18057522
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