Energy gaps of low filling factor quantum Hall states in two-dimensional Indium Selenide.

Indium selenide is a promising two-dimensional semiconductor with thickness-dependent bandgap and high electron mobility. We have fabricated high mobility few-layer InSe devices and studied them in quantum Hall regime. Landau levels at filling factors between 1 and 10 are resolved. Energy gaps at different magnetic fields, gate voltage and temperatures will be discussed.