Bulletin of the American Physical Society
APS March Meeting 2020
Volume 65, Number 1
Monday–Friday, March 2–6, 2020; Denver, Colorado
Session B47: Interfaces, Coupling, and Ultra-Thin Materials
11:15 AM–2:15 PM,
Monday, March 2, 2020
Room: 710/712
Sponsoring
Unit:
GMAG
Chair: Nathan Satchell, Univ of Leeds
Abstract: B47.00005 : Strain-driven spin-Hall antiferromagnetic memory for 180° switching*
View Presentation Abstract
Presenter:
Arun Parthasarathy
(Electrical and Computer Engineering, New York University, Brooklyn, NY 11201)
Authors:
Arun Parthasarathy
(Electrical and Computer Engineering, New York University, Brooklyn, NY 11201)
Nikhil Rangarajan
(Electrical and Computer Engineering, New York University, Brooklyn, NY 11201)
Shaloo Rakheja
(Holonyak Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801)
We propose 180° reversal of the Néel order by leveraging both piezoelectric strain and spin-Hall effect in PMN-PT/NiO/Pt system. The reversal is accomplished by first realizing strain-induced perpendicular reorientation, followed by an electric current pulse that provides the antidamping torque necessary to tip the Néel order to the reversed easy-axis orientation. The antiferromagnetic state is read via exchange-bias-coupled magnetic tunnel junction. Modeling shows that the strain-driven NiO memory can switch under 100 ps, while consuming < 300 aJ/bit switching energy.
[1] Chen et al. Phys. Rev. Lett. 120, 207204 (2018).
[2] Zhang et al. Phys. Rev. B 95, 174420 (2017).
*This work was supported in part by the SRC and NSF through ECCS 1740136, and from the MRSEC Program of the NSF under Award Number DMR-1420073.
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