Bulletin of the American Physical Society
APS March Meeting 2020
Volume 65, Number 1
Monday–Friday, March 2–6, 2020; Denver, Colorado
Session B27: Applications of Semiconductors, Dielectrics, and Complex Oxides
11:15 AM–2:03 PM,
Monday, March 2, 2020
Room: 404
Sponsoring
Unit:
FIAP
Chair: Meeghage Perera, National Research Council
Abstract: B27.00011 : Characterization of quantum tunneling devices by controlled current pulses*
Presenter:
Edgar J Patino
(University of the Andes)
Authors:
Edgar J Patino
(University of the Andes)
Leonardo Rios E
(University of the Andes)
Quantum tunneling devices constitute a prominent research area due to their use in fundamental and applied research investigations such as superconducting, magnetic and spintronic devices. The main difficulties in fabrication of such devices relies on two fronts directly related with; tunnel barrier quality i.e. absence of pinholes or hot spots, and low dissipation within the tunnel barrier material. A good tunnel barrier quality usually requires an oxygen plasma with pronounced uniformity and long oxidation time. Regarding the minimization of dissipation, in the present work, we show the development of a characterization technique based on controlled current pulses, which significantly reduces heat dissipation and thus allows a significant increase in the Tunnel Junctions lifetime. Acquiring data this way permits to reach higher tunneling current values compared to the ones obtained by standard DC characterization techniques, which are customary used in tunnel junction experiments.
*This work was funded by“Programa Nacional de Ciencias Basicas” COLCIENCIAS(No.120452128168),“ConvocatoriaProgramas2012”Vicerrectoria de Investigaciones, and Departamento de física of Universidad de los Andes (Bogota,Colombia)
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