films near the metal-insulator transition*

The metal-insulator transition in the correlated material V₂O₃ is a highly studied phenomenon. Recent research has shown the nanotextured phase coexistence around the transition temperature (T_c) in V₂O₃ films, but the dynamic electronic properties are still not well resolved. Here, we study resistance fluctuations as a function of time in both low frequency (< 300 kHz) and higher frequency (225MHz-580MHz) ranges, comparing them to show the dynamic properties at both low and high frequency. We performed measurements at temperatures above T_c, close to T_c, and below T_c. We found 1/f type noise close to and below (yet near) T_c as expected at low frequencies, and similar resistance fluctuation noise (mean square voltage fluctuations proportional to the square of the bias current) at higher frequency. However, the integrated noise intensity at high frequency exceeds our expectation based on an extrapolation of the observed low frequency data. More detailed measurements and experiments are ongoing to reveal the mechanism that causes the resistance fluctuations in V₂O₃ films near the metal-insulator transition.