Bulletin of the American Physical Society
APS March Meeting 2019
Volume 64, Number 2
Monday–Friday, March 4–8, 2019; Boston, Massachusetts
Session P11: Materials for Quantum Information Science -- Defect-based Quantum TechnologyFocus
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Sponsoring Units: DMP DCMP FIAP Chair: Gary Wolfowicz, University of Chicago Room: BCEC 152 |
Wednesday, March 6, 2019 2:30PM - 3:06PM |
P11.00001: Correlated Light-Matter Interactions and Excited-State Dynamics for Quantum Information Invited Speaker: Prineha Narang Exciting discoveries during the past few decades in quantum science and technology have brought us to this next step in the quantum revolution: the ability to fabricate, image and measure materials and their properties at the level of single atoms is almost within our grasp. The physics of quantum materials is rich with spectacular excited-state and non-equilibrium effects, but many of these phenomena remain poorly understood and consequently technologically unexplored. Therefore, this talk will focus on how quantum-engineered materials behave, particularly away from equilibrium, and how we can harness these effects in quantum technologies and quantum information science. Electron-photon, electron-electron as well as electron-phonon dynamics and far-from-equilibrium transport are critical to describe ultrafast and excited-state interactions in materials. Ab initio descriptions of phonons are essential to capture both excitation and loss (decoherence) mechanisms, and are challenging to incorporate directly in calculations due to a large mismatch in energy scales between electrons and phonons. I will show results using a new theoretical method we have developed to calculate arbitrary electron-phonon and electron-optical interactions in a diagrammatic many-body framework integrated with a nonequilibrium carrier transport method. Further, I will discuss a new formalism at the intersection of cavity quantum-electrodynamics and electronic structure methods, quantum-electrodynamical density functional theory, to treat electrons and photons on the same quantized footing. I will demonstrate how these ab initio techniques guide the search for relevant quantum properties in 2D and 3D materials, including new quantum emitters. Finally, I will show recent results using newly developed theoretical methods to evaluate the linear and nonlinear optical properties of low dimensional and heterostructured quantum materials and pathways to leverage these properties in quantum devices. |
Wednesday, March 6, 2019 3:06PM - 3:18PM |
P11.00002: Design of Two-Level Quantum state in 2D Materials for Single Photon Emission Sunny Gupta, Ji-Hui Yang, Boris Yakobson Due to reduced dimensionality, defect levels in two-dimensional (2D) semiconductors are often far away from band edges, making 2D semiconductors ideal systems for single photon emission (SPE), if they can host defects forming a two-level quantum state. Recently, SPE was experimentally observed in different 2D materials. However, the defect centers serving as sources for SPE are yet to be identified and the possible mechanism for the formation of the ideal two-level quantum state is yet to be uncovered. Here, using first-principles calculations and group theory analysis we highlight the advantages of 2D materials as host systems and also identify and design defects in various 2D materials for SPE. A generalized strategy is proposed to design defect complex by adding a paramagnetic impurity next to a vacancy defect, which forms an ideal two-level quantum system. The electronic states of the designed defect complex are well isolated from the host band edges, belong to a majority spin eigenstate, and can be controllably excited by x-polarized light, thereby satisfying all the criteria required for an ideal SPE. The defect complex is thermodynamically stable, and appears feasible for experimental realization, to serve as an SPE-source, essential for quantum computing. |
Wednesday, March 6, 2019 3:18PM - 3:30PM |
P11.00003: The Effects of Disorder on 2D Material Properties Blake Duschatko, Christopher Ciccarino, Prineha Narang Two dimensional materials, such as hexagonal boron nitride and transition metal dichalcogenides, are emerging platforms for quantum information science, where the controlled introduction of atom-like defects can be utilized for numerous applications. While the excitement surrounding these systems has grown, a great deal of work remains to be done in order to realize the full integration of 2D materials into quantum devices. In this talk, I present how recent advances in high precision atomic imaging can be leveraged with ab initio calculations to advance our ability to characterize material properties. Working with atomic coordinates of monolayer MoS2, we find that it possesses out of plane ripples on the order of 50 picometers, effectively hindering equilibration. The general disorder present in such nonzero temperature samples has substantial effects on the dynamics of the material and optical properties of engineered defects. I will show calculations that capture the effects of disorder and discuss how this presents a significant step forward in 2D material theory. |
Wednesday, March 6, 2019 3:30PM - 3:42PM |
P11.00004: Theoretical Investigation of Color Centers in Diamond for Quantum Information Science Christopher Ciccarino, Johannes Flick, Matthew Trusheim, Prineha Narang Color centers in diamond have emerged as leading solid-state “artificial atoms” for a range of promising technologies from quantum sensing to quantum networks. While properties and limitations of canonical color centers NV- and SiV- have been well documented,exploration and a fundamental understanding of novel color centers presents an exciting opportunity to improve upon the current state of the art. We leverage our unique first-principles methods to detail crucial defect properties in the SnV-, PbV-[1] and SiV0, in addition to novel diamond color centers. We capture the zero phonon line energies and phonon sideband profile and in particular investigate the potential for Jahn-Teller distortion effects in each of these systems, where electron-spin-phonon coupling phenomena are capable of drastically altering predicted spin-orbit splitting and ZPL energies. We detail our unique theoretical approach to the study of these defects, and through our results offer a comprehensive perspective of diamond defects for applications in quantum devices. |
Wednesday, March 6, 2019 3:42PM - 3:54PM |
P11.00005: Phonon-induced multi-color correlations in hBN single-photon emitters Matthew Feldman, Alexander Puretzky, Lucas Lindsey, Dayrl Briggs, Phil Evans, Richard F Haglund, Benjamin J Lawrie
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Wednesday, March 6, 2019 3:54PM - 4:06PM |
P11.00006: Microwave dielectric loss of hexagonal Boron Nitride in the low-temperature, single-photon regime Megan Yamoah, Joel Wang, Charlotte Boettcher, Bharath Kannan, David K Kim, Philip Krantz, Daniel Rodan Legrain, Oriol Rubies-Bigorda, Jonilyn L Yoder, Kenji Watanabe, Takashi Taniguchi, Terry Philip Orlando, Simon Gustavsson, Pablo Jarillo-Herrero, William D Oliver The use of 2D van der Waals (vdW) heterostructures in quantum computing devices, due in part to the potential of combining different materials with epitaxial precision, has begun to merge the superconducting and 2D material platforms. Hexagonal boron nitride (hBN), a vdW material widely used as an ultra-clean substrate, gate dielectric, and protection layer in vdW heterostructures, may be used in building high-quality Josephson elements and qubit capacitors. VdW materials have been extensively studied in the DC and optical regimes, but understanding their response to microwave excitations is vital to introducing them into superconducting circuits. We study hBN in the microwave regime by integrating the material in a superconducting LC resonator to extract its loss tangent. Our scheme can be used for characterizing not only the electromagnetic properties of hBN, but also other 2D materials. |
Wednesday, March 6, 2019 4:06PM - 4:18PM |
P11.00007: Towards coherent control of single nuclear spins of 171Yb in YVO Jonathan Kindem, Andrei Ruskuc, John Bartholomew, Jake Rochman, Andrei Faraon Optically addressable solid-state spins are a promising platform for the development of scalable quantum technologies. Rare-earth ions in crystals are an attractive candidate for such systems due to their long optical and spin coherence lifetimes. By interfacing these ions with nanophotonic cavities, we can significantly enhance the photon-ion interaction to overcome their intrinsically weak optical transition strengths and enable detection and manipulation of single ions. |
Wednesday, March 6, 2019 4:18PM - 4:30PM |
P11.00008: Characterization of epitaxially grown Er doped Y2O3 for quantum optics applications Manish Kumar Singh, Khan Alam, Tijana Rajh, Tian Zhong, Supratik Guha Rare earth ions (REI) are strong candidates for optical quantum memory applications. Erbium, with optical transition in the 1.5 µm band is of particular interest. Recent studies have shown coherence times exceeding 1 sec in 167Er . The coherence properties of REI are critically dependent on the host crystals, and methods of incorporating REI into the host structures play an important role as structural defects and impurities determine the local environment of the ions, which is an important factor contributing to line-broadening mechanisms. |
Wednesday, March 6, 2019 4:30PM - 4:42PM |
P11.00009: Precisely Located Si Vacancies in 4H-SiC Generated via Focused Li-ion Beam for Quantum Information Science Applications Shojan Pavunny, Edward S Bielejec, Samuel Carter, Hunter Banks, Rachael Myers-Ward, Paul Barry Klein, Matthew T Dejarld, Allan S Bracker, Evan Richard Glaser, David Kurt Gaskill Photo-stable and spin (S = 3/2) coherent silicon vacancies (VSi) in the CMOS compatible semiconductor SiC are of interest for future applications in scalable quantum information and sensing. The ability to precisely create the desired density at the optimal location in a three-dimensional solid-state matrix with nanometer accuracy and excellent optical properties is indispensable for the above applications. Here we demonstrate the precise generation of single and ensemble emitter arrays in defect-free epitaxial 4H-SiC layer through Li-ions, implanted with an energy of 100 keV and doses ranging from 1012–1015 Li/cm2 using a maskless focused ion beam technique (~25 nm diameter spot positioned with ~25 nm accuracy and having anion travel depth of ~400 nm). High-resolution photoluminescence (E⊥c) studies revealed the scalable and reproducible defect generation with a mean efficiency of ~17% and intensity (~8 kC/s), yield (~28%), statistical distribution, average number of single VSi/spot, fluorescence saturation, and photostability of single emitters. Given the encouraging results, we will discuss utilizing this approach to implant single VSi into the mode maximum of SiC photonic crystal cavities with Purcell enhancement of zero-phonon line and increased photon indistinguishability. |
Wednesday, March 6, 2019 4:42PM - 4:54PM |
P11.00010: Radiationless Creation and Patterning of Color Centers in Diamond Patrick J McQuade, Andrew Elias-Gonzalez, Matthew A Gebbie, Nicholas A Melosh Spatially patterned and scalable creation of optical color centers remains a key bottleneck in fabrication for quantum computing and quantum sensing applications. Host lattice vacancies are necessary to form electronic defect states with transition energies in the visible light range. Current fabrication methods use high-energy ion irradiation to create these vacancies, leading to significant lattice damage and limited spatial control. I will present a new approach for creation and patterning of color centers in diamond without the use of irradiation. We demonstrate vacancy doping into diamond through the use of “vacancy injection” films. We also show the ability to pattern color centers on the nanoscale by using conventional photolithography to pattern film deposition. These methods enable a higher level of control for color center creation and decreased host lattice damage, as compared to methods that rely on high-energy irradiation. Additionally, this method provides a general strategy for controllably doping vacancies into a wide range of materials using conventional CMOS processing techniques, with potential applications in microelectronics and 2-D magnetic materials. |
Wednesday, March 6, 2019 4:54PM - 5:06PM |
P11.00011: Strongly Extended Superradiance in Optical Dirac Cone Metamaterials Olivia Mello, Yang Li, Philip Camayd-Munoz, Linbo Shao, Cleaven Chia, Eric Mazur, Marko Loncar Zero index metamaterials (ZIM) experience near-perfect spatial coherence and infinite spatial wavelength.[1] We design and simulate a diamond metamaterial with zero refractive index at 737 nm. This occurs due to a Dirac cone within the dispersion of our metamaterial. With this property we analytically and numerically demonstrate the hallmarks of superradiance: an N2 scaling of enhancement of power within our structure over a spatial extent much greater than a wavelength, where N is the number of emitters, as well as cooperative decay rate enhancement relative to the single emitter decay rate. Additionally, we demonstrate preliminary fabrication results with the intention to experimentally implement this concept using silicon vacancy centers (SiV) in diamond. |
Wednesday, March 6, 2019 5:06PM - 5:18PM |
P11.00012: Electron-electron interactions in highly degenerately doped embedded Si:P delta layers in silicon produced by variable PH3 dosing Joseph Hagmann, Xiqiao Wang, Ranjit Kashid, Pradeep Namboodiri, Jonathan Wyrick, Scott W Schmucker, Neil Zimmerman, M. D. Stewart, Richard M. Silver, Curt A Richter Key to producing quantum computing devices based on the atomistic placement of dopants in Si by STM lithography is the formation of embedded highly doped Si:P delta layers (δ-layers). This study investigates the transport behavior and the electron-electron interaction (EEI) physics in the highly doped regions of embedded Si:P-based devices by means of self-consistent magnetotransport (MT) measurements. In earlier work, we demonstrated that a careful MT study at low T, along with analysis of the weak localization (WL) signal, allows us to extract parameters associated with the electronic transport that offer a meaningful quantitative characterization of δ-layer quality and dopant diffusion. We build on this work by examining EEI behaviors in a set of samples with embedded Si:P delta layers produced with different PH3 exposure procedures prior to Si encapsulation. We show that the charge carriers behave as 2DEGs in embedded Si:P δ-layers in samples grown with a locking layer (LL) to bolster confinement of the dopants, while samples grown without a LL demonstrate several signatures of transport and EEI in a 3D system. The impact between δ-layer confinement and EEI on screening lengths affects both electrostatic gating of and tunneling transport through Si:P single atom transistors. |
Wednesday, March 6, 2019 5:18PM - 5:30PM |
P11.00013: Atomic Scale Patterned Arsenic in Silicon Taylor Stock, Marcel van Loon, Oliver Warschkow, Emily Hofmann, Eleanor Crane, Steven Schofield, Neil J Curson Over the past two decades, scanning tunnelling microscopy - hydrogen desorption lithography (STM-HDL) has been developed and utilized to great effect. Atomic scale devices can now be fabricated by positioning phosphorus (P) atoms in a silicon (Si) surface with near atomic precision. Expanding STM-HDL fabrication to include multiple species of dopant impurity atoms could provide new possibilities for device structure and function. Working towards expanding the materials palette of STM lithography, we have examined the compatibility of arsenic (As) with STM-HDL. We have studied AsH3 adsorption on Si(001) and Si(001)-H, and compared this to the well-studied Si(001)-PH3 system (used in 2D patterning of P in Si). We observe a number of subtle, but important differences between these two systems and discuss possible implications for advanced device fabrication strategies. In addition to the adsorption behaviour of the AsH3 molecules on the Si surface, we also discuss the incorporation and encapsulation of patterned 2D As within the Si lattice, and the optimization of electrical transport properties of As delta-layers in Si. Finally, we demonstrate nanoscale device structure patterning in Si using the two unique donor species (P and As) within a single 2D plane. |
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