grown by molecular beam epitaxy*

Superconductors with strong spin-orbit coupling (SOC) are attractive for generating triplet Cooper pairs and topological superconductivity (TSC). In few-layer NbSe₂, strong SOC is reported to give rise to TSC. However, as of date, few-layer NbSe₂ is produced mainly through mechanical exfoliation. There is a demand to construct large scale NbSe₂ thin films to further enable fabrication of scalable heterostructures that can exhibit the unique properties of TSC. Recent reports show that NbSe₂ can be grown on graphene by molecular beam epitaxy (MBE). In contrast, in this talk, we report our progress on few-layer NbSe₂ grown on insulating substrates by MBE. The layers are characterized by in-situ reflection high energy electron diffraction (RHEED) and ex-situ Raman spectroscopy. A clear superconducting transition has been observed with the transition temperature (Tc) above 2K. We will discuss correlations between layer quality and the Tc. We will also present our studies regarding the critical field in thin film NbSe₂.