Atomic Structure and Nano-Fracture Mechanics of Semiconductor-Oxide Interfaces Investigated by Transmission Electron Microscopy and Scanning Force Microscopy*

Quantitative Information on interface adhesion and fracture resistance is of importance for electronic and MEMS/NEWS device manufacturing. Here we focus on Scanning Force Microscopy derived methods [1] which reveal the mechanical properties and fracture thresholds of oxide with respect to semiconductor interfaces like SiO₂/Si and SiO₂/SiC. Load/unload cycles i.e. force vs. distance curves reflect the effect of structural defects on interface strength under the influence of fluids solubilising and modifying surface/ interface layers [2]. Nanomechanic properties can be assessed at different time scales. Interface defects are characterized by complementary Microscopic and Spectroscopic Nanoanalysis using STEM and HR-TEM.

[1] Elastic modulus and fracture strength evaluation on the nanoscale by scanning force microscope experiments D M Jarzabek, et al., Nanotechnology (2014) DOI:10.1088/0957-4484/25/21/215701

[2] Influence of Alkali Ions on Tribological Properties of Silicon Surface, D M Jarzabek, et al., Tribol Lett (2015) DOI 10.1007/s11249-015-0603-5