Superconducting gatemon qubits based on selective-area-grown semiconductor materials*

Semiconductor-superconductor hybrid gatemon qubits offer a promising path to large scale quantum processors. In contrast to conventional transmon qubits that are controlled using currents, gatemons allow complete control using only gate voltages [1], potentially alleviating challenges to scaling superconducting qubits [2]. Here, we present a novel approach to building gatemons utilizing selective-area-grown InAs structures on an InP substrate [3,4]. This approach allows deterministic placement and straightforward fabrication of the gatemon qubits. We characterize the material and perform first proof-of-principle measurements to demonstrate coherent qubit oscillations. Further work is needed to understand the dominant loss mechanisms and improve coherence times.

[1] Larsen et al., Phys. Rev. Lett. 115, 127001 (2015)
[2] Casparis et al., Nature Nanotechnology 13, 915–919 (2018)
[3] Krizek et al., Phys. Rev. Materials 2, 093401 (2018)
[4] Vaitiekenas et al., Phys. Rev. Lett. 121, 147701 (2018)