Bulletin of the American Physical Society
APS March Meeting 2019
Volume 64, Number 2
Monday–Friday, March 4–8, 2019; Boston, Massachusetts
Session B45: Semiconductor Surfaces, Films, and Nanostructures
11:15 AM–1:51 PM,
Monday, March 4, 2019
BCEC
Room: 211
Sponsoring
Unit:
DCMP
Chair: Elena Cimpoiasu, United States Naval Academy
Abstract: B45.00002 : The Experimental Research on Oxidation Kinetics of Uranium Surface Treated by Laser Nitriding*
11:27 AM–11:39 AM
Presenter:
Yin Hu
(Institute of Materials, China Academy of Engineering Physics)
Authors:
Yin Hu
(Institute of Materials, China Academy of Engineering Physics)
Haibo Li
(Institute of Materials, China Academy of Engineering Physics)
Jianwei Qin
(Institute of Materials, China Academy of Engineering Physics)
Xiaofang Wang
(Institute of Materials, China Academy of Engineering Physics)
Yongbin Zhang
(Institute of Materials, China Academy of Engineering Physics)
Yanzhi Zhang
(Institute of Materials, China Academy of Engineering Physics)
Kezhao Liu
(Institute of Materials, China Academy of Engineering Physics)
The growth of the oxide thickness firstly follows a parabolic growth model for the nitriding uranium with O2, which is coincided with the diffusion barrier model. And the initial regime of slow oxide-film growth is followed by a much faster growth stage of a linear curve, resulting from the cracking of the initial oxide layer. It has been shown that the critical thickness reached at the onset of the transition is about 300 nm in this work.
The activation energy equaling to 98 kJ/mol was obtained by monitoring the oxide growth in the first stage, and 85.9 kJ/mol in the second stage . In comparison, the growth of oxide thickness of untreated uranium was also monitored, indicating that corrosion resistance could be obviously improved after nitriding treatment. It may result from the formation of U-N-O compound after oxidation, which would resist the diffusion of oxygen ions in the oxide layer.
*This work is supported by the National Natural Science Foundation of China (Grant No. U1630250).
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