Bulletin of the American Physical Society
APS March Meeting 2019
Volume 64, Number 2
Monday–Friday, March 4–8, 2019; Boston, Massachusetts
Session B39: Spin transport and Hall effect
11:15 AM–2:15 PM,
Monday, March 4, 2019
BCEC
Room: 207
Sponsoring
Units:
GMAG DMP
Chair: Xiaoqin (Elaine) Li, Univ of Texas, Austin
Abstract: B39.00001 : Spin-to-Charge Conversion in Bi Films and Bi/Ag Bilayers*
11:15 AM–11:51 AM
Presenter:
Di Yue
(Department of Physics, Fudan University)
Authors:
Di Yue
(Department of Physics, Fudan University)
Weiwei Lin
(Department of Physics and Astronomy, Johns Hopkins University)
Jiajia Li
(Department of Physics, Fudan University)
Xiaofeng Jin
(Department of Physics, Fudan University)
C. L. Chien
(Department of Physics and Astronomy, Johns Hopkins University)
In this work [4], we use thermal injection from a ferromagnetic insulator YIG into Bi films and Bi/Ag bilayers, demonstrated to be without the parasitic effects. The Bi layers of various thicknesses have been made by both MBE and sputtering at 77 K with similar results. The contribution of the pure spin current can be unequivocally determined by the insertion of a MgO(3 nm) layer, which blocks the spin current and eliminates the ISHE voltage. In sharp contrast to previous results, we have observed much shorter spin diffusion length in Bi of about 1 nm and negligibly small spin Hall angle. We have also observed no evidence of the IREE in the Bi/Ag bilayers. We note that Bi is a well-known thermoelectric material with low carrier concentration and very large Nernst voltage.
[1] D. Hou et al., Appl. Phys. Lett. 101, 042403 (2012).
[2] J. C. Rojas Sanchez et al., Nat. Comm. 4, 2944 (2013).
[3] Y. Ando et al., J. Phys. Soc. Jpn 86, 011001 (2017).
[4] D. Yue et al., Phys. Rev. Lett. 121, 037201 (2018).
*This work was supported by the U.S. Department of Energy (Grant No. DE-SC0009390), DMREF (Grant No. 1729555), MOST (Grants No. 2015CB921402, No. 2011CB921802, and No. 2016YFA0300703), NSFC (Grants No. 11374057, No. 11434003, and No. 11421404).
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