Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe<sub>3</sub>GeTe<sub>2</sub>

The advent of two-dimensional van der Waals crystals creates new possibilities in developing novel spintronic devices. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr₂Ge₂Te₆ and CrI₃ at low temperatures. Here, we developed a new device fabrication technique, and successfully isolated monolayers from layered metallic magnet Fe₃GeTe₂. We found that the itinerant ferromagnetism persists in Fe₃GeTe₂ down to monolayer. The ferromagnetic transition temperature, T_c, is suppressed in pristine Fe₃GeTe₂ thin flakes. An ionic gate, however, dramatically raises the T_cup to room temperature. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe₃GeTe₂ opens up opportunities for potential voltage-controlled magnetoelectronics.

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Bulletin of the American Physical Society

APS March Meeting 2019

Volume 64, Number 2

Monday–Friday, March 4–8, 2019; Boston, Massachusetts

Session B14: 2D Materials (Metals, Superconductors, and Correlated Materials) -- Magnetism

Abstract: B14.00002 : Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe3GeTe2

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Abstract: B14.00002 : Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe₃GeTe₂