Bulletin of the American Physical Society
APS March Meeting 2018
Volume 63, Number 1
Monday–Friday, March 5–9, 2018; Los Angeles, California
Session P37: Devices from 2D Materials III - Various ApplicationsFocus
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Sponsoring Units: DMP Chair: Benjamin Hunt, Carnegie Mellon University Room: LACC 411 |
Wednesday, March 7, 2018 2:30PM - 2:42PM |
P37.00001: Motion transduction with suspended Graphene resonators RAJAN SINGH, Ryan Nicholl, Sagar Chakraborty, Kirill Bolotin, Saikat Ghosh Detecting motion with high precision has been a fundamental pursuit in science for detecting new forces and in technology, towards developing new forms of sensors, oscillators or computational tools. Here we report a suspended Graphene resonator as a tunable, broad-bandwidth motion detector with high sensitivity at room temperature. As a proof-of-concept experiment, we use a large area Silicon Nitride (SiN) as a target oscillator. Intrinsic, elastic coupling of suspended Graphene resonator to SiN is measured to be in the strong-coupling regime. When the SiN resonator is excited photo-thermally, we measure an average gain of 38 dB in Graphene displacement power spectrum. The corresponding detection sensitivity is 33 fm/√Hz, with a detector back-action of 28 fN/√Hz while a moderate improvement in signal-to-noise ratio of 3.6 dB is limited primarily by Graphene Brownian motion. Thermomechanical squeezing of noise further improves the sensitivity by a factor of 4. With growing usage of high-quality factor SiN resonators as hybrid opto-mechanical elements, such Graphene-based motion transducer can significantly aid in detecting their motion, due to forces at the level of few photons. |
Wednesday, March 7, 2018 2:42PM - 2:54PM |
P37.00002: Ultra-high Temperature Annealing Effects on Graphene Nano-electromechanical Resonators Dong Hoon Shin, Hakseong Kim, Min Hee Kwon, Sang Wook Lee In this study, we investigate the ultra-high temperature annealing effects on resonance behaviour of graphene resonators. The graphene resonators were fabricated with a suspended ribbon-shaped graphene and characterized by Raman spectroscopy during the ultra-high temperature annealing process up to the temperature exceeding 2000 K induced by Joule heating. We also demonstrate more than 10-fold enhancement in the mass resolution of clean graphene resonators after the ultra-high temperature annealing process. The mass sensing performance and reliability of the clean graphene resonators were evaluated by observing the change in resonance behaviour after controlled deposition of chromium. Even though the resonance measurement was performed at low vacuum and room temperature conditions, the clean graphene resonator exhibited the minimum detectable mass of 0.41 ag. |
Wednesday, March 7, 2018 2:54PM - 3:06PM |
P37.00003: Optomechanical actuation of graphene nanoelectromechanical systems: Does it matter where you play them? David Miller, Andrew Blaikie, Max Kant, Benjamin Aleman Optomechanical actuation of two-dimensional nanoelectromechanical systems (2D NEMS) offers several advantages over conventional electrostatic drive techniques, including the potential to apply local forces that can efficiently and selectively excite high order modes with low incident power. This type of local mode control is vital for applications like all-mechanical cooling and point-mass detection. However, this potential has yet to be realized because the location dependence of the optomechanical drive has yet to be examined. Here, we utilize a scanning optical drive laser to ascertain the position dependence of the optomechanical response in a graphene 2D NEMS. We find that the induced force is tightly localized around the center of the laser spot, allowing for efficient and selective excitation of high-order modes by driving on their antinodes. We find that inducing curvature with a DC electrostatic gate voltage amplifies the optomechanical response, further improving the drive efficiency and lowering the required laser power. These results establish the local nature of the optomechanical drive in graphene, and indicate that a scanning optical drive system combined with an electrostatic gate is a best-of-both-worlds approach to actuate 2D NEMS. |
Wednesday, March 7, 2018 3:06PM - 3:42PM |
P37.00004: Universal Non-volatile Resistance Switching Phenomenon in Atomic Monolayers Invited Speaker: Deji Akinwande We have observed non-volatile resistance switching (NVRS) phenomenon in non-metallic single-layer atomic sheets in a vertical device configuration. Results suggest a rich multi-physics effect persistent in both poly- and single- crystalline atomic sheets below 1nm thickness. NVRS is observed in several TMDs including MoS2, MoSe2, WSe2, and WS2 and also in h-BN. This alludes to a universal effect in non-metallic 2D materials. Our findings overturn the contemporary thinking that non-volatile switching is not scalable below a few nanometers. Emerging concepts in non-volatile flexible memory fabrics, zero static power radio-frequency switches, and brain-inspired (neuromorphic) computing could benefit substantially from the pervasive NVRS effect in atomic sheets. Experimentally results for RF switching have been achieved. |
Wednesday, March 7, 2018 3:42PM - 3:54PM |
P37.00005: Multiplexed Detection of Toxins in Tap Water Using a Graphene Aptasensor System Jinglei Ping, Alan Johnson Toxins in environmental water bodies pose significant threats to the health of exposed individuals and communities. However, simultaneous monitoring of multiple organic/inorganic toxins in real-world water bodies in real time remains a challenge. We developed a multiplexed toxin-detection system enabled by transistors based on graphene-aptamer hybrids. Using this system, we demonstrated simultaneous quantification of two toxins, bishphenol A and mercury ions, with high sensitivity and selectivity. Our approach holds great promise to allow development of next-generation toxin-monitoring nanosensor networks for use in environmental control and toxicology research. |
Wednesday, March 7, 2018 3:54PM - 4:06PM |
P37.00006: Carrier transport studies in graphene-base Hot Electron Transistor Ahmad Zubair, Amir Nourbakhsh, Haozhe Wang, Meng Qi, Marek Hempel, Jing Kong, Debdeep Jena, Mildred Dresselhaus, Tomas Palacios Hot electron transistors (HETs) are promising devices for potential high-frequency operation and hot electron spectroscopy. In HET, carrier transport is due to the injection of hot electrons from an emitter to a collector which is modulated by a base electrode. Monolayer graphene, being the thinnest available conductive membrane in nature, provides us with the opportunity to study the transport properties of HET at the ultimate scaling limit. Previously, we have demonstrated high performance graphene-base HET with GaN/AlN emitter and a graphene/WSe2 van der Waals heterostructure base-collector stack. In this work, we discuss the effect of material parameters on the transport properties of the heterojunction diodes (i.e. Emitter-Base and Base-Collector) of HETs, and their impact on the HET performance. From the temperature dependent transport measurements, we identify the quantum mechanical tunneling as the major carrier transport mechanism in HETs. Finally, we demonstrate a new generation of graphene-base HET with record current density above kA/cm2. |
Wednesday, March 7, 2018 4:06PM - 4:18PM |
P37.00007: Graphene deflectometry for sensing molecular and ionic processes at the nanoscale Michael Zwolak, Daniel Gruss, Alex Smolyanitsky Single-molecule sensing is at the core of modern biophysics and nanoscale science, from revolutionizing healthcare through rapid, low-cost sequencing to understanding physical processes such as ionic hydration at their most basic level. However, rapid, weak interactions at the molecular scale are often too fast for the detection bandwidth or outside the detection sensitivity. Of critical importance, most of the envisioned biophysical applications are at room temperature, which further limits detection due to significant thermal noise. Here, we theoretically demonstrate reliable transduction of forces into electronic currents via locally suspended graphene nanoribbons, which allows for the detection of ultra-weak -- tens of picoNewtons -- and fast -- gigahertz -- processes, at room temperature. The sensitivity of electronic couplings to distance magnifies the effect of the deflection, giving rise to measurable electronic current changes even in aqueous solution. Due to thermal fluctuations, the characteristic charge carrier transmission peak follows the Voigt profile. Room temperature graphene deflectometry presents new opportunities in the sensing and detection of molecular-scale processes, from ion dynamics and DNA sequencing to protein folding, in their native environment. |
Wednesday, March 7, 2018 4:18PM - 4:30PM |
P37.00008: Thickness dependent cracking in layered 2-D system for strain sensing application Tushar Sakorikar, Kavitha Maheswari Kavirajan, Pramitha Vayalamkuzhi, Manu Jaiswal We study crack propagation in a layered 2D material, reduced graphene oxide, on a flexible substrate under applied strain. This problem is interesting since the crack formation strongly modulates the electrical transport in this system. We study how film cracking is affecting the electrical transport in strained rGO films. It is observed that the change in fractional resistance at 5% strain varies from 3 times to 12 times the resistance at unstrained condition, as the film thickness is increased. Parallel and qausi periodic cracks are observed in rGO films upon straining, which are found to have strong dependence on the rGO film thickness. Crack density and crack width show contrasting trend as the film thickness is increased, and the observations are described by sequential cracking model. It is found that by variation in the film thicknesses, the films can be tuned from being strain resistant to strain responsive, and the former is attributed to a favorable combination of crack density and crack width. When we tune the thickness of the film for strain responsive behavior, strain sensors with gauge factors of upto 370 are realized. While, for the thickness corresponding to strain resistant film, stable stretchable rGO-TiO2 UV photodetector is realized. |
Wednesday, March 7, 2018 4:30PM - 4:42PM |
P37.00009: Capillary-Force-Assisted Clean-PDMS Transfer 2D Materials for Heterostructures and Nano-Devices Xuezhi Ma, Qiushi Liu, Da Xu, Sanggon Kim, Yangzhi Zhu, Yongtao Cui, Ming Liu Transferring 2D materials flakes for heterostructures fabrication or simply for characterization plays an essential role. A popular method for 2D material transfer is PMMA transfer. The problem comes from the PMMA residue, which cannot be fully removed from the material surface and may result in poor performance. Another alternative method is the h-BN-flake transfer, but releasing the adhered 2D materials to expose their surfaces is impossible. |
Wednesday, March 7, 2018 4:42PM - 4:54PM |
P37.00010: Riveting 2D Materials: MEMS Strained MoS2 in Excess of 1% and Future Outlooks Mounika Vutukuru, Jason Christopher, David Lloyd, Joseph Bunch, Bennett Goldberg, David Bishop, Anna Swan Despite their unsurpassed tensile strength and unique strain-dependent electronic, optical and thermal properties, strain-based 2D material devices have yet to take the significant step from lab to ubiquitous technology. Here, we present the integration of 2D materials with microelectromechanical systems (MEMS) as the platform for applying strain. Such implementation allows strain-emergent phenomena to be accessible in a way that could be easily integrated into devices. We report on the use of MEMS to strain MoS2 to greater than 1% strain for the first time, as confirmed through both micro-Raman and Photoluminescence. One of the major hurdles to successful integration is anchoring the material to avoid slipping. This milestone was achieved through the development of a specialized polymer-assisted 2D material transfer technique, and the use of micro-riveting to anchor the 2D material in place. Our framework opens the doors for investigation of different strain-dependent phenomena such as electrical transport, pseudomagnetic field generation, and generating strain fields with great potential for novel electronic properties. |
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