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Atomically thin materials such as single layer Molybdenum Disulfide (MoS₂) have emerged as promising candidates for next generation flexible 2D electronics. However, few studies to date have investigated the electronic properties of these materials as a function of applied strain. In this work we use low temperature scanning tunneling microscopy and spectroscopy (STM/STS) to ellucidate the effect of strain on the quasiparticle band-gap of monolayer MoS₂. Controlled strain was achieved by depositing single layer MoS₂ on a flat substrate and then bending the substrate with a varying radius of curvature using a custom built sample holder.