Study of a weak-localization like negative magnetoresistance effect in the high mobility GaAs/AlGaAs 2DES*

High mobility two-dimensional electron systems (2DES) realized with GaAs/AlGaAs heterostructures exhibit interesting electrical and physical phenomena including novel microwave induced zero-resistance states, radiation-induced magnetoresistance oscillations [1-2], giant magnetoresistance [3-5], and also a weak-localization (WL)-like magnetoresistance effect. In this contribution, we present a study of the WL-like effect in GaAs/AlGaAs 2DES that appears at low magnetic fields and attempt to fit the effect using 2D WL theory without including the spin-orbit correction to the conductivity. This study aims to explore the temperature dependence of the WL-like effect and extract the phase coherence times using the fit. The fit extracted phase coherence times are compared with the single particle scattering time and the transport scattering times to examine whether the observed effect represents the signatures of the well-known WL effect.
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