Bulletin of the American Physical Society
APS March Meeting 2018
Volume 63, Number 1
Monday–Friday, March 5–9, 2018; Los Angeles, California
Session F27: Nanophotonics |
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Sponsoring Units: DAMOP DQI DCMP Chair: Konrad W. Lehnert, JILA Room: LACC 404B |
Tuesday, March 6, 2018 11:15AM - 11:27AM |
F27.00001: Ensemble nuclear polarization in diamond in a broad range of magnetic fields Huijie Zheng, Viktor Ivády, Arne Wickenbrock, Lykourgos Bougas, Igor Abrikosov, Adam Gali, Dmitry Budker Nuclear polarization via optical pumping of the nitrogen-vacancy (NV) centers in diamond has drawn recent attention due to its importance for understanding the fundamental processes involving the centers in applications such as optical hyperpolarization of nuclei. We have studied polarization of the 14N nuclei constituent to NV centers in a broad range of magnetic fields, from zero to above the magnetic field of ≈ 0.1 T corresponding to the ground-state level anticrossing (GSLAC). We observe sharp drops in the polarization superimposed on top of a broader regular dependence including resonance peaks at 51.2 mT and 102.4 mT, reported in [1] and [2]. The widths of the sharp features are approximately 0.33 mT full width at half maximum at 59 mT and 0.78 mT close to GSLAC. A theoretical explanation describing all these features will be provided. |
Tuesday, March 6, 2018 11:27AM - 11:39AM |
F27.00002: Nitrogen Vacancy Centers in Diamond Optomechanical Crystals Jeff Cady, Kenneth Lee, Ania Jayich Mechanical interfaces to quantum two-level systems enable a new regime of quantum control, readout, and information transfer which could augment more established optical and microwave methods. Recent experiments have demonstrated such an interface using strain-mediated coupling between diamond mechanical resonators and the spin and orbital degrees of freedom of embedded Nitrogen vacancy (NV) centers [1], which exhibit long quantum coherence. Strong NV-phonon coupling in these devices would enable such applications as phonon-mediated spin-spin interactions, NV-assisted mechanical cooling, and mechanical transduction of quantum information. However, these applications require devices that simultaneously operate in the quantum regime of mechanical motion and preserve NV coherence, presenting a significant engineering challenge. Here we fabricate single-crystal diamond optomechanical crystals with GHz-frequency mechanical modes, telecom-band optical modes, and embedded NV centers. We study the dynamics of the combined optical-mechanical-NV system and evaluate the prospects for realizing applications of quantum acoustics in these devices. |
Tuesday, March 6, 2018 11:39AM - 11:51AM |
F27.00003: 4H Semi-insulating Silicon Carbide Membrane Microresonators Pen-Li Yu, Noah Opondo, Sen Dai, Boyang Jiang, Sunil Bhave A mechanical resonator can serve as a versatile quantum bus to store and transfer quantum information between different physical degrees of freedom. A membrane resonator with embedded paramagnetic color centers allows a monolithic and compact device to couple a two-level system with a mechanical mode. Traditionally, the membrane resonator is defined by thin film deposition and subsequent removal of the underlying substrate. However, deposited or layer-transferred SiC/diamond film on silicon does not have coherent color centers, hence new fabrication technique is required. Here we report the wafer-scale fabrication of semi-insulating 4H silicon carbide membrane microresonators by using backside deep reactive ion etch. The etch chemistry allows us to selectively etch 200 μm SiC trenches to form membranes of 10 μm thick. The membranes have quality factors of 200 at atmospheric pressure and room temperature. We generate a resonant oscillating strain of 0.5 x 10-3 at 6.3 MHz. Such level of strain will enable mechanical control of spin states. |
Tuesday, March 6, 2018 11:51AM - 12:03PM |
F27.00004: Strong Mechanical Modulation of Nitrogen-Vacancy Center Excited States Huiyao Chen, Evan MacQuarrie, Gregory Fuchs We study the resonant optical transitions of a single nitrogen-vacancy (NV) center under a strong mechanical drive in the resolved sideband regime. The NV center’s excited orbital states are strain-coupled to a monolithic, gigahertz-frequency diamond mechanical resonator, which dresses its resonant optical transitions with multiple orders of coherent Raman sidebands. Our study reveals all three symmetries of electron-phonon interactions, which both shift and mix the two excited-state orbital branches, Ex and Ey. Furthermore, we demonstrate Autler-Townes splitting of the orbital levels when a multiple of the mechanical drive frequency is placed in resonance with the Ex, Ey orbital splitting. Finally, we discuss the applications of strong mechanical driving to engineer NV center orbital states. These experiments serve as a model system for the study of a strongly-driven quantum system, and help lay the groundwork for the growing field of quantum acoustics. |
Tuesday, March 6, 2018 12:03PM - 12:15PM |
F27.00005: Coupling Impurity Spins in Diamond to a 3D Loop-gap Resonator Jason Ball, Yuimaru Kubo, Junichi Isoya, Denis Konstantinov We designed a loop-gap microwave resonator for applications of spin-based hybrid quantum systems, and tested it with impurity spins in diamond. Strong coupling with an ensemble of nitrogen-vacancy (NV) centers as well as that of nitrogen (P1) centers were observed. The external coupling rate can be tuned by changing the depth of the microwave SMA antenna pins. We also demonstrated time-domain measurements using standard pulse sequences of electron spin resonance. Large echo signals appear thanks to the large number of spins that are homogeneously coupled to the microwave magnetic field of the resonator. Coherence time T2 and spin relaxation time T1 were measured at 10 mK. |
Tuesday, March 6, 2018 12:15PM - 12:27PM |
F27.00006: Electrical control of single photon emitter in layered hexagonal boron nitride Quanwei Li, Yang Xia, Jeongmin Kim, Wei Bao, Yuan Wang, Xiang Zhang Photons are attractive as quantum information carriers due to their ultra-long coherence time, extremely low propagation loss, light-speed transmission, easy manipulation and low noise. A central building block for photonic quantum system is single-photon emitters (SPEs). The atomic defect in layered hexagonal boron nitride (hBN) was recently discovered to be an ultra-bright, stable SPE with small phonon side bands. Here we report the study of electrical control of single photon emitter in layered hexagonal boron nitride. The demonstrated efficient control will enable interesting quantum information applications and promise unprecedented computation capability and communication security. |
Tuesday, March 6, 2018 12:27PM - 12:39PM |
F27.00007: Single Photon Emission from Zero-Dimensional Boron Nitride Nano-Structures Joshua Ziegler, Andrew Blaikie, Aidin Fathalizadeh, David Miller, Jordan Mohrhardt, Kerisha Williams, Alex Zettl, Benjamin Aleman Bright, robust hosts of quantum emitters are necessary for the development of integrated quantum information technologies and metrology. Quantum emitters in 2D hexagonal boron nitride (hBN) exhibit promise for photonic integration with bright fluorescence and room-temperature stability. However, they are susceptible to strain – causing unwanted wavelength shifts. We find a bright single photon emitter in boron nitride nano-cocoons (BNNC) - a boron nitride nano-allotrope that overcomes strain susceptibility through structural robustness. We optically characterize our quantum emitters and find extensive similarities to the SPEs found in other hBN allotropes. The photoluminescence intensity can be up to 100 kcps at 1 mW, the lifetime ranges from 1-10 ns, and the distance between the zero-phonon line to phonon sideband is 133 meV. We find the emission varies across 27 nm compared to the 200 nm seen in 2D hBN. This range is more similar to SPEs in bulk hBN, corroborating our idea of structural robustness. We identify the host material through cross-correlated confocal optical microscopy and transmission electron microscopy. This robust nano-allotrope of BN offers an ideal host of SPEs for use in hybrid photonic technologies, quantum metrology, and biolabeling. |
Tuesday, March 6, 2018 12:39PM - 12:51PM |
F27.00008: Ultralong Relaxation Times in Bistable Hybrid Systems Andreas Angerer, Stefan Putz, Dmitry Krimer, Thomas Astner, William Munro, Kae Nemoto, Stefan Rotter, Joerg Schmiedmayer, Johannes Majer Nonlinear systems, whose outputs are not directly proportional to their inputs, are well known to exhibit many interesting and important phenomena which have profoundly changed our technological landscape over the last 50 years. Recently the ability to engineer quantum metamaterials through hybridization has allowed to explore these nonlinear effects in systems with no natural analog. Here we investigate amplitude bistability, which is one of the most fundamental nonlinear phenomena, in a hybrid system composed of a superconducting resonator inductively coupled to an ensemble of nitrogen-vacancy centers. One of the exciting properties of this spin system is its long spin life-time, many orders of magnitude longer than other relevant timescales of the hybrid system. This allows us to dynamically explore this nonlinear regime of cavity quantum electrodynamics (cQED) and demonstrate a critical slowing down of the cavity population on the order of several tens of thousands of seconds - a timescale much longer than observed so far for this effect. |
Tuesday, March 6, 2018 12:51PM - 1:03PM |
F27.00009: Measurement Based 2-qubit Unitary Gates for Pairs of Nitrogen-Vacancy Centers in Diamond Chenxu Liu, M.V. Gurudev Dutt, David Pekker The implementation of a high-fidelity 2-qubit quantum gate is an essential, and perhaps the most challenging, ingredient in building a measurement based quantum computer using Nitrogen-vacancy (NV) centers. We propose a measurement-based scheme to generate 2-qubit unitary gates for two NV centers in diamond. We drive a Raman transition in both NV centers simultaneously. We demonstrate that our scheme results in a unitary 2-qubit quantum gate heralded by a Raman photon when the distance between the NV centers is chosen to be a quarter-wavelength of the Raman photon. The generation of the Raman photon goes through multiple excited electronic states of an NV center, and the interference between these paths controls the fidelity of the 2-qubit gate. We find that there is a special value of the drive frequency which should yield essentially perfect fidelity when photon collection efficiency is unity. |
Tuesday, March 6, 2018 1:03PM - 1:15PM |
F27.00010: Smith Purcell Radiation Generation from the VUV to the Near IR: Tunable Emission from Nanophotonic Structures in a Modified SEM Steven Kooi, Charles Roques-Carmes, Yi Yang, Ido Kaminer, Marin Soljacic, Aviram Massuda, Amit Solanki, Fawwaz Habbal, Yujia Yang, Thomas Christensen, Aun Zaidi, Peter Krogen, Chitraang Murdia, Karl K. Berggren, Owen Miller The conventional Smith-Purcell effect describes light emission due to collective excitation induced by free electrons coupling to the electromagnetic modes of a periodic structure. We present experimental results on a range of samples from sub 100 nm pitch gratings to periodic high aspect ratio silicon nanowire structures to engineered metasurfaces using low-energy electrons (2.5 -40 keV) in a modified scanning electron microscope. We show that samples not commonly thought to be appropriate for Smith Purcell emission (because of theoretical and experimental misbeliefs), namely non-electrically conductive structures, can be strong emitters. This is observed experimentally and now also predicted theoretically. The possibility of producing tunable short wavelength emission from relatively low-energy electrons (accessible with regular scanning or transmission electron microscopes) is a promising field of research, because of its numerous applications and the potential emergence of recoil physics in table-top experiments. |
Tuesday, March 6, 2018 1:15PM - 1:27PM |
F27.00011: Avalanche Photoemission in Suspended Carbon Nanotubes: Light Without Heat Bo Wang, Fatemeh Rezaeifar, Jihan Chen, sisi yang, Rehan Kapadia, stephen Cronin We observe bright electroluminescence from suspended carbon nanotube (CNT) field effect transistors (FETs) under extremely low applied electrical powers (~nW). Here, light emission occurs under positive applied gate voltages, with the FET in its "off" state. This enables us to apply high bias voltages (4V) without heating the CNT. Under these conditions, we observe light emission at currents as small as 1nA, which is three orders of magnitude lower than previous studies. The mechanism of light emission is understood on the basis of steep band bending that occurs in the conduction and valence band profiles at the contacts, which produces a peak electric field of 500kV/cm, enabling the acceleration of carriers beyond the threshold of exciton emission. The exciton-generated electrons and holes are then accelerated and emit excitons in an avalanche process. We also observe light emission at negative applied gate voltages in its "on" state. However, substantial Joule heating (T>1000K) is also observed so that it is difficult to separate the mechanisms of thermal emission from hot carrier photoemission in this regime. |
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