Bulletin of the American Physical Society
APS March Meeting 2018
Monday–Friday, March 5–9, 2018; Los Angeles, California
Session F08: Two-dimensional Topological Insulators: Transport (II)
11:15 AM–2:15 PM,
Tuesday, March 6, 2018
LACC Room: 153C
Sponsoring Unit: DCMP
Abstract: F08.00004 : Transport in InAs/GaSb Composite Quantum Wells with an Oxide Top Barrier*
11:51 AM–12:03 PM
(Teledyne Scientific and Imaging)
InAs/GaSb composite quantum wells (CQWs) have now attracted much attentions with the exciting prospect that a variety of topological phases could be hosted in this material. Typical CQWs incorporate AlGaSb as top and bottom barriers by molecular epitaxy, providing nearly lattice - matched interfaces. On the other hand it may be desirable to replace AlGaSb barriers by oxide/ high - k* dielectrics for the purpose of enhancing gating functionality and device reliability. Here we report preliminary results of low temperature quantum transport on devices with an oxide top barrier, where the MBE grown AlGaSb barrier was removed by selective etching and an oxide layer was subsequently deposited by ALD. We will show the transport results of devices with ALD dielectrics including HfO2/ZrO2/Al2O3.
*The work in PKU was supported by NBRPC-2014CB92090 and work in Rice was supported by NSF DMR-1508644.
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