Bulletin of the American Physical Society
APS March Meeting 2017
Volume 62, Number 4
Monday–Friday, March 13–17, 2017; New Orleans, Louisiana
Session R28: Growth and Synthesis: Semiconductors and other Materials |
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Sponsoring Units: FIAP Chair: Randall Headrick, University of Vermont Room: 291 |
Thursday, March 16, 2017 8:00AM - 8:12AM |
R28.00001: Ballistic Deposition of Nanoclusters. Jeffrey Ulbrandt, Yang Li, Randall Headrick Nanoporous thin-films are an important class of materials, possessing a large surface area to volume ratio, with applications ranging from thermoelectric and photovoltaic materials to supercapacitors. In-Situ X-ray Reflectivity and Grazing Incidence Small Angle X-Ray Scattering (GISAXS) were used to monitor thin-films grown from Tungsten Silicide (WSi2) and Copper (Cu) nanoclusters. The nanoclusters ranged in size from 2 nm to 6 nm diameter and were made by high-pressure magnetron sputtering via plasma gas condensation (PGC). X-Ray Reflectivity (XRR) measurements of the films at various stages of growth reveal that the resulting films exhibit very low density, approaching 15{\%} of bulk density. This is consistent with a simple off-lattice ballistic deposition model where particles stick at the point of first contact without further restructuring. [Preview Abstract] |
Thursday, March 16, 2017 8:12AM - 8:24AM |
R28.00002: High-Purity Germanium Crystal Growth and the Performance of a SuperCDMS Detector Fabricated from a USD Crystal. guojian wang, Hao Mei, Dongming Mei, Gang Yang High-purity germanium crystals with 12 cm in diameter were grown by Czochralski method. The dislocation density was investigated by microscopy. The impurity distribution in the crystals was measured by Hall effect and Photo-thermal ionization spectroscopy (PTIS). A 2.3kg crystal was fabricated into a SuperCDMS detector by Texas A{\&}M University, which was tested by University of Minnesota. The results show the detector has interesting performance. Keywords: High-purity germanium crystal, Czochralski method This work is supported by DOE grant DE-FG02-10ER46709 and the state of South Dakota. [Preview Abstract] |
Thursday, March 16, 2017 8:24AM - 8:36AM |
R28.00003: Simple synthesis of ultra-high quality In$_{2}$S$_{3}$ thin films on InAs substrates Yumin Sim, Jinbae Kim, Maeng-Je Seong We report a simple and reliable technique to synthesize high-quality In$_{2}$S$_{3}$ films on device-ready substrate, such as InAs substrates for useful device applications, by using thermal sulfurization in a hot-wall tube furnace. The crystal structure and composition were studied by using X-ray diffraction and energy dispersive X-ray, and the results confirmed that the synthesized In$_{2}$S$_{3}$ films were cubic $\beta $-In$_{2}$S$_{3}$ or tetragonal $\beta $-In$_{2}$S$_{3}$, depending on growth conditions. Morphology, vibrational modes, and optical properties were investigated by using field emission scanning electron microscopy, Raman, and photoluminescence spectroscopy, and the results indicated that the In$_{2}$S$_{3}$ films are remarkable crystal quality with substantial efficiency in photoluminescence. Especially, by optimizing the growth conditions, we have grown an extremely high-quality tetragonal $\beta $-In$_{2}$S$_{3}$ thin film firmly remained on the InAs substrate, for the first time. [Preview Abstract] |
Thursday, March 16, 2017 8:36AM - 8:48AM |
R28.00004: A divalent rare earth oxide semiconductor: Yttrium monoxide Kenichi Kaminaga, Ryosuke Sei, Kouichi Hayashi, Naohisa Happo, Hiroo Tajiri, Daichi Oka, Tomoteru Fukumura, Tetsuya Hasegawa Rare earth sesquioxides like Y$_{\mathrm{2}}$O$_{\mathrm{3\thinspace }}$are known as widegap insulators with the highly stable closed shell trivalent rare earth ions. On the other hand, rare earth monoxides such as YO have been recognized as gaseous phase, and only EuO and YbO were thermodynamically stable solid-phase rock salt monoxides. In this study, solid-phase rock salt yttrium monoxide, YO, was synthesized in a form of epitaxial thin film by pulsed laser deposition method [1]. YO possesses unusual valence of Y$^{\mathrm{2+}}$ ([Kr] 4$d^{\mathrm{1}})$. In contrast with Y$_{\mathrm{2}}$O$_{\mathrm{3}}$, YO was narrow gap semiconductor with dark-brown color. The electrical conductivity was tunable from 10$^{\mathrm{-1}}$ to 10$^{\mathrm{3\thinspace }}\Omega ^{\mathrm{-1}}$cm$^{\mathrm{-1}}$ by introducing oxygen vacancies as electron donor. Weak antilocalization behavior was observed indicating significant spin-orbit coupling owing to 4$d$ electron carrier. The absorption spectral shape implies the Mott-Hubbard insulator character of YO. Rare earth monoixdes will be new platform of functional oxides. [1] K. Kaminaga et.al., Appl. Phys. Lett. \textbf{108}, 122102 (2016). (Selected as Editor's Picks) [Preview Abstract] |
Thursday, March 16, 2017 8:48AM - 9:00AM |
R28.00005: Identifying the intermediate phase of tin oxides as Sn$_3$O$_4$ through Raman spectroscopy from theory and experiment Marcel Giar, Bianca Eifert, Martin Becker, Christian T. Reindl, Lilan Zheng, Angelika Polity, Yunbin He, Christian Heiliger, Peter J. Klar The existence of an intermediate phase within the tin oxide system was first reported in 1882. However, its stoichiometry and its crystal structure have been dubious and heavily debated ever since, despite a multitude of structural investigations. Here we show that a combined Raman spectroscopic investigation based on \textit{ab initio} methods and experiments offers an alternative to diffraction studies, which are not conclusive for this material system. It allows us to unambigiuously identify the intermediate phase as Sn$_3$O$_4$ and to rule out the other likely candidate, Sn$_2$O$_3$. We assign the one-phonon Raman signals of Sn$_3$O$_4$ to the mode symmetries of the corresponding point group $C_{2h}$ and confirm the space group as $P2_1/c$ with 14 atoms per unit cell. [Preview Abstract] |
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