Bulletin of the American Physical Society
APS March Meeting 2017
Volume 62, Number 4
Monday–Friday, March 13–17, 2017; New Orleans, Louisiana
Session P27: Semiconductors: Electrical Transport
2:30 PM–5:30 PM,
Wednesday, March 15, 2017
Room: 290
Sponsoring
Unit:
FIAP
Chair: Ernesto Marinero, Perdue University
Abstract ID: BAPS.2017.MAR.P27.4
Abstract: P27.00004 : Nonradiative hot carrier capture cross section of defects in GaN from first principles*
3:06 PM–3:18 PM
Preview Abstract Abstract
Authors:
Jun Jiang
(Department of Physics and the Quantum Theory Project, University of Florida, Gainesville, Florida)
Georgios D. Barmparis
(Crete Center for Quantum Complexity and Nanotechnology, Department of Physics, University of Crete, Heraklin, Greece)
Sokrates T. Pantelides
(Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee)
X.-G. Zhang
(Department of Physics and the Quantum Theory Project, University of Florida, Gainesville, Florida)
*Acknowledgments: NSF grant ECCS-1508898
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2017.MAR.P27.4
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