APS March Meeting 2017
Volume 62, Number 4
Monday–Friday, March 13–17, 2017;
New Orleans, Louisiana
Session F24: Graphene Spintronics
11:15 AM–2:15 PM,
Tuesday, March 14, 2017
Room: New Orleans Theater C
Sponsoring
Unit:
GMAG
Chair: Roland Kawakami, Ohio State University
Abstract ID: BAPS.2017.MAR.F24.1
Abstract: F24.00001 : Advances in graphene spintronics
11:15 AM–11:51 AM
Preview Abstract
Abstract
Author:
bart van wees
(Zernike Institute for Advanced Materials University of Groningen)
I will give an overview of the status of graphene spintronics, from both
scientific as technological perspectives. In the introduction I will show
that (single) layer graphene is the ideal host for electronic spins,
allowing spin transport by diffusion over distances exceeding 20 micrometers
at room temperature. I will show how by the use of carrier drift, induced by
charge currents, effective spin relaxation lengths of 90 micrometer can be
obtained in graphene encapsulated between boron-nitride layers[1]. This also
allows the controlled flow and guiding of spin currents, opening new avenues
for spin logic devices based on lateral architectures. By preparing graphene
on top of a ferromagnetic insulator (yttrium iron garnet (YIG)) we have
shown that we can induce an exchange interaction in the graphene, thus
effectively making the graphene magnetic[2]. This allows for new ways to
induce and control spin precession for new applications. Finally I will show
how, by using two-layer BN tunnel barriers, spins can be injected from a
ferromagnet into graphene with a spin polarization which can be tuned
continuously from -80{\%} to 40{\%}, using a bias range from -0.3V to 0.3V
across the barrier[3]. These unique record values of the spin polarization
are not yet understood, but they highlight the potential of Van der Waals
stacking of graphene and related 2D materials for spintronics.
[1] J. Ingla Aynes et al., Eighty --eight percent directional guiding of
spin currents with 90 micrometer relaxation length in bilayer graphene using
carrier drift, Nano Lett. 16, 4825 (2016)
[2] C. Leutenantsmeyer et al., Proximity induced room-temperature
ferromagnetism in graphene probed with spin currents, 2D Mater. 4, 014001
(2017)
[3] M.Gurram et al., Giant electric field controlled spin polarization in
ferromagnet/bilayer boron nitride/graphene tunneljunctions, submitted to
Nat. Comm.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2017.MAR.F24.1