Bulletin of the American Physical Society
APS March Meeting 2016
Volume 61, Number 2
Monday–Friday, March 14–18, 2016; Baltimore, Maryland
Session K7: Dopants and Defects in Semiconductors: Nitrides
8:00 AM–11:00 AM,
Wednesday, March 16, 2016
Room: 303
Sponsoring
Units:
DMP FIAP
Chair: Christopher Van de Walle, UCSB
Abstract ID: BAPS.2016.MAR.K7.5
Abstract: K7.00005 : Impact of point defects on III-nitride tunnel devices.*
9:36 AM–9:48 AM
Preview Abstract Abstract
Authors:
Darshana Wickramaratne
(Materials Department, UC Santa Barbara)
John Lyons
(Center for Functional Nanomaterials, Brookhaven National Laboratory)
Chris G. Van de Walle
(Materials Department, UC Santa Barbara)
*This work was supported by the Center for Low Energy Systems Technology (LEAST), one of the six SRC STARnet Centers, sponsored by MARCO and DARPA.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2016.MAR.K7.5
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