APS March Meeting 2016
Volume 61, Number 2
Monday–Friday, March 14–18, 2016;
Baltimore, Maryland
Session C30: Novel Ferroic Systems
2:30 PM–5:30 PM,
Monday, March 14, 2016
Room: 329
Sponsoring
Units:
DMP DCMP
Chair: R Ramesh, UCBerkeley
Abstract ID: BAPS.2016.MAR.C30.1
Abstract: C30.00001 : Moving Towards Domain Wall Devices in Ferroics*
2:30 PM–3:06 PM
Preview Abstract
Abstract
Author:
Marty Gregg
(Queens University Belfast)
Domain walls in ferroelectric, ferroelastic and multiferroic oxides are
distinct functional materials in their own right. They can be conducting, or
even superconducting, when surrounding domains are insulating [1, 2]; they
can demonstrate magnetism when the surrounding bulk is non-magnetic [3] and
they can contain ordered electrical dipoles when the matrix containing them
is non-polar [4]. Since domain walls can also be created, destroyed, and
controllably moved from place to place, there is an amazing opportunity for
us to design new forms of devices in which functionality is actively and
dynamically deployed (now you see it; now you don't). This is the essence of
the emerging field known as ``domain wall nanoelectronics'' [5]. In time,
this arena of research could change the way we think of nanoscale functional
devices, moving increasingly towards agile circuitry and neuromorphic device
architectures.
While the control of domain wall injection, movement and annihilation has
been developed rather well in the nanomagnetics community (in race-track [6]
and domain wall logic [7] research), similar research has not been widely
performed in nanoscale ferroelectrics, ferroelastics and multiferroics. This
talk will discuss progress that has been made to date and the way in which
nanomagnetics research can be used as a source of inspiration. Site-specific
domain wall injection and motion control in both proper and improper
ferroelectrics using inhomogeneous electric and elastic fields, as well as
dielectric patterning in uniaxial ferroelectrics, will be specifically
considered [8]. As will be shown, sufficient control has been developed to
allow the creation of a diode for domain wall motion in ferroelectrics, for
example.
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Mater., \textbf{23}, 5377 (2011); P. Maksymovych, \textit{et al.} Nano Lett., \textbf{11},
1906 (2011); T. Sluka \textit{et al.} Nat. Commun., \textbf{4}, 1808 (2013);
[2] A. Aird, E. K. H. Salje, J.Phys.:Condens. Matter, \textbf{10}, L377
(1998);
[3] S. Farokhipoor \textit{et al.}, Nature \textbf{515}, 379 (2014);
[4] S. Van Aert \textit{et al.} Adv. Mater., \textbf{24}, 523 (2012);
[5] G. Catalan \textit{et al.} Rev Mod Phys \textbf{84}, 119 (2012);
[6] S. S. P. Parkin, M. Hayashi {\&} L. Thomas, Science \textbf{320},
190--194 (2008);
[7] D. A. Allwood \textit{et al.} Science \textbf{309}, 1688--1692 (2005).
[8] J. R. Whyte \textit{et al.}, Adv Mat, \textbf{26}, 293 (2014); J. R. Whyte \textit{et al.}, J. Appl.
Phys. \textbf{116}, 066813 (2014); J. R. Whyte \textit{et al.}, Nat. Commun. \textbf{6},
7361 (2015); R. G. P. McQuaid \textit{et al.} Nat. Commun. (under review 2015).
*The author acknowledges support from the Engineering and Physical Sciences Research Council (EPSRC)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2016.MAR.C30.1