Bulletin of the American Physical Society
APS March Meeting 2016
Volume 61, Number 2
Monday–Friday, March 14–18, 2016; Baltimore, Maryland
Session A51: Nanomanufacturing and Optical/Laser/High Frequency Devices |
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Sponsoring Units: FIAP Chair: Nicholas Charipar, Naval Research Lab Room: Hilton Baltimore Holiday Ballroom 2 |
Monday, March 14, 2016 8:00AM - 8:12AM |
A51.00001: Laser printed interconnects for flexible electronics Alberto Pique, Iyoel Beniam, Scott Mathews, Nicholas Charipar Laser-induced forward transfer (LIFT) can be used to generate microscale 3D structures for interconnect applications non-lithographically. The laser printing of these interconnects takes place through aggregation of voxels of either molten metal or dispersed metallic nanoparticles. However, the resulting 3D structures do not achieve the bulk conductivity of metal interconnects of the same cross-section and length as those formed by wire bonding or tab welding. It is possible, however, to laser transfer entire structures using a LIFT technique known as lase-and-place. Lase-and-place allows whole components and parts to be transferred from a donor substrate onto a desired location with one single laser pulse. This talk will present the use of LIFT to laser print freestanding solid metal interconnects to connect individual devices into functional circuits. Furthermore, the same laser can bend or fold the thin metal foils prior to transfer, thus forming compliant 3D structures able to provide strain relief due to flexing or thermal mismatch. Examples of these laser printed 3D metallic bridges and their role in the development of next generation flexible electronics by additive manufacturing will be presented. [Preview Abstract] |
Monday, March 14, 2016 8:12AM - 8:24AM |
A51.00002: Expanding the Range and Utility of Atomic Calligraphy Lawrence Barrett, Thomas Stark, Jeremy Reeves, Richard Lally, David Bishop Due to the many potential applications of nanotechnology, there is a drive for new methods of nanomanufacturing. Atomic calligraphy has shown promise, not only as faster and as more economical than conventional methods, but also more precise, potentially being able to place single atoms with nanometer resolution [1]. Atomic calligraphy utilizes nanoscale apertures to define where material is deposited during evaporation. Microelectromechanical systems (MEMS) allow the aperture to be moved with nanometer precision. The technique has been demonstrated, but only over a small range of several microns and structures were written on the same substrate as the MEMS. We have moved from this to a system where structures can be written on any surface over a range of centimeters. To achieve this, first a process for etching through the substrate without damaging the delicate MEMS was developed. Then a scheme for making electrical contact to the MEMS with a low enough profile to still allow the aperture to be brought in contact with the writing surface was devised. Finally, a system of piezo stages was installed to quickly and precisely move the aperture from one area to another. [1] M. Imboden, H. Han, J. Chang, F. Pardo, C. A. Bolle, E. Lowell, and D. J. Bishop, Nano Lett. 13, 3379 (2013). [Preview Abstract] |
Monday, March 14, 2016 8:24AM - 8:36AM |
A51.00003: 3D Alignment of nanowriters using fringe capacitance Richard Lally, Thomas Stark, Jeremy Reeves, Lawrence Barrett, David Bishop With the introduction of atomic calligraphy, high resolution nanoscale structures can be fabricated rapidly over a large surface area [1]. This reliable, chemically stable and cost effective nanoscale writing method can be applied to a number of interesting applications. One specific application of this writing approach is to fabricate metamaterials, a process that requires precise alignment of the MEMS and substrate. Here we present a MEMS based solution coupling the well-studied comb drive capacitance effects [2] with the less predictable close order fringe effects. The combined capacitance allows for precise measurements in the nanometer range. Using two sets of orthogonal static MEMS comb drives, the capacitance is used to discern the x, y, and z spatial displacement from the substrate. The unique SOI wafer is prepared creating a periodic array of silicon pillars. Placement of additional MEMS comb drives at the MEMS device edges will allow stage corrections for tip, tilt and rotational alignment thereby reducing the effects generated by variations in wafer thickness and surface smoothness. [1] Imboden, M. and Bishop. D. Physics Today. 2014, 67 (12), 45-50. [2] Elshurafa, A. and El-Masry, E. J. Micromech. Microeng. 2010, 20(4), 045027 [Preview Abstract] |
Monday, March 14, 2016 8:36AM - 8:48AM |
A51.00004: Monolayer Tungsten Disulfide Laser Yu Ye, Zi Jing Wong, Xiufang Lu, Xingjie Ni, Hanyu Zhu, Xianhui Chen, Yuan Wang, Xiang Zhang Two-dimensional van der Waals materials have opened a new paradigm for fundamental physics exploration and device applications because of their emerging physical properties. Unlike gapless graphene, monolayer transition-metal dichalcogenides are two-dimensional semiconductors that undergo an indirect-to-direct band gap transition, creating new optical functionalities for next-generation ultra-compact photonics and optoelectronics. Here, we report the realization of a two-dimensional excitonic laser by embedding monolayer tungsten disulfide in a microdisk resonator. [Preview Abstract] |
Monday, March 14, 2016 8:48AM - 9:00AM |
A51.00005: Guided-Wave Plasmon Polariton Modes in High-Index Dielectric Structures Rachel Owen, Janelle Leger, Brad Johnson Interest in subwavelength waveguides has increased as the need to interface between optical signals and increasingly small electronic components grows. Surface plasmon polaritons (SPPs) are surface charge density oscillations localized to a metal-dielectric interface that confine energy to a structure that is not diffraction limited. Thus, structures that support SPPs are promising candidates for subwavelength waveguides. However, most of the electric field propagates along the metal interface, causing Ohmic damping to restrict use to short-range applications. Here we present an architecture that supports high index dielectric plasmon polariton modes (HID-PPMs). These structures utilize the metal-dielectric-metal-substrate structure of typical SPP waveguides. However, the core dielectric layer has a higher refractive index than the substrate. This small structural change causes the bulk of the electric field to be concentrated in the dielectric region resulting in a dramatic reduction of damping effects. Here we present experimental evidence of HID-PPMs in a simple trilayer structure. Our results match model predictions with remarkable accuracy using minimal parameter modifications. We discuss these results as well as the potential applications of these devices. [Preview Abstract] |
Monday, March 14, 2016 9:00AM - 9:12AM |
A51.00006: Efficient directional excitation of surface plasmons by a single-element nanoantenna Wenjie Yao, Shang Liu, Huimin Liao, Zhi Li, Chengwei Sun, Jianjun Chen, Qihuang Gong Directional light scattering is important in basic research and real applications. This area has been successfully downscaled to wavelength and subwavelength scales with the development of optical antennas, especially single-element nanoantennas. Here we show, by adding an auxiliary resonant structure to a single-element plasmonic nanoantenna, the highly efficient lowest-order antenna mode can be effectively transferred into inactive higher-order modes. Based on this mode conversion, scattered optical fields can be well manipulated by utilizing the interference between different antenna modes. Both broadband directional excitation of surface plasmon polaritons (SPPs) and inversion of SPP launching direction at different wavelengths are experimentally demonstrated as typical examples. The proposed strategy based on mode conversion and mode interference provides new opportunities for the design of nanoscale optical devices, especially directional nanoantennas. [Preview Abstract] |
Monday, March 14, 2016 9:12AM - 9:24AM |
A51.00007: Enhanced performance in SnO$_{\mathrm{2}}$ thin film UV photodetectors via self-assembled CuO/SnO$_{\mathrm{2}}$ nanoheterojunctions Botong Qiu, Ting Xie, Md Hasan, Ebuka Arinze, Nhan Nguyen, Abhishek Motayed, Susanna Thon, Ratan Debnath Low-cost visible-blind ultraviolet (UV) photodetectors (PDs) are of interest for versatile applications in digital imaging, optical communications, and biomedical sensing. We report on the use of CuO/SnO$_{\mathrm{2}} \quad p-n$ nanoscale heterojunctions to enhance the performance of SnO$_{\mathrm{2}}$ thin film UV PDs. Our method produces robust structures that operate at low bias without complex fabrication processes. The nanoheterojunctions are self-assembled by sputtering Cu clusters that oxidize in ambient to form CuO nanoparticles. The chemical identity, morphology and distribution of the nanoparticles are investigated through high-resolution XPS and AFM characterization. Enhanced UV absorption is demonstrated both experimentally and using optical simulations after addition of the CuO/SnO$_{\mathrm{2}}$ nanoheterojunctions. The device performance improvements are attributed to the strong absorption in the CuO nanoparticles and electron transfer facilitated by the nanoheterojunctions. The PDs show a five-fold increase in peak responsivity at 0.2 V bias. The photoresponse factor, defined as the wavelength-dependent ratio between the photocurrent and dark current, was estimated to be 592 for the CuO-SnO$_{\mathrm{2}}$ PD under 290 nm illumination. [Preview Abstract] |
Monday, March 14, 2016 9:24AM - 9:36AM |
A51.00008: Influence of cavity optomechanics on Kerr frequency combs Ryo Suzuki, Akitoshi Jinnai, Takuma Nagano, Tomoya Kobatake, Takumi Kato, Takasumi Tanabe The Kerr frequency comb has the potential for applications in, for example, spectroscopy, optical communication, waveform shaping and astronomy. Recently, the mechanism of soliton pulse generation in a microcavity has been studied numerically and experimentally. Silicon nitride ring and magnesium fluoride microcavities are commonly used in experimental research, because of their high nonlinearity, dispersion and other advantageous characteristics. On the other hand, silica toroid microcavities are not much used for Kerr comb research in the time domain (e. g. pulse generation/measurement). This is because toroid microcavities are prone to cavity optomechanical vibration, and the cavity dispersion of the fundamental mode of a small radius microcavity is normal. To fabricate a toroid microcavity with a large radius, we need to use a particular fabrication process. In this research, by controlling the detuning of the resonance and pump laser frequencies, we suppressed the noise of optomechanical vibration and obtained pulses with low background noise using higher order resonance modes. In addition, we observed optical pulses with repetition frequencies of up to 3.7 THz. [Preview Abstract] |
Monday, March 14, 2016 9:36AM - 9:48AM |
A51.00009: Open optical microcavities for CQED experiments and devices Jason Smith, Aurelien Trichet, Philip Dolan, David Coles, Lucas Flatten, Sam Johnson, Robin Patel, Stefan Schwarz, Feng Li, Dimitrii Krizhanovskii, Alexander Tartakovskii, Maurice Skolnick, Claire Vallance, David Hunger Open microcavities have emerged in recent years as flexible tools for quantum optics and engineered light matter coupling. Fabry Perot resonators with concave mirrors on the micrometre scale, highly resonant optical modes can be generated with volumes of order 1-10$\lambda^3$, along with facile tunability and efficient external coupling. Here we will describe our latest advances in open cavity fabrication using focused ion beam milled templates on which high reflectivity mirrors can be deposited providing measured finesses up to 50,000 with surfaces that deviate by less than 2 nm rms from the design. This degree of control provides opportunities for engineering optical modes to suit a wide variety of applications. We will describe the fabrication of cavities with radius of curvature from 2 $\mu$m to 1 mm, and the realisation of coupled cavities with controlled mode overlap. We will further describe some of the applications of these open cavity devices to particle sensing, exciton-polariton physics with quantum wells and 2D materials, tunable lasers, and spin-photon interfaces using diamond colour centres. [Preview Abstract] |
Monday, March 14, 2016 9:48AM - 10:00AM |
A51.00010: Vanadium dioxide for terahertz devices Nicholas Charipar, Heungsoo Kim, Scott Mathews, Alberto Pique We investigate VO$_{2}$ as a material for ultrafast sub-millimeter wave devices. This material exhibits a semiconductor to metal transition (SMT) at $\sim$68 $^{\circ}$C which results in a dramatic increase in carrier density ($\sim10^{19} - 10^{23}$ cm$^{-3}$). The SMT transition can be induced thermally, electrically, or optically enabling strong interactions and unique device operation. This transition has been exploited for numerous microwave/terahertz devices such as tunable filters and modulators. However due to its low carrier mobility ($\sim 0.1$ cm$^{2}$/V-s) and long recovery times ($\sim$ ns), VO$_{2}$ has been largely ignored as a possible material for millimeter wave and terahertz pulse generation even though the SMT can occur within 100 fs. VO$_{2}$ thin film devices were fabricated and characterized. These devices were capable of generating $\sim$1 ps electrical pulses. We will present details on the ultrafast switching behaviors of VO$_{2}$ along with the design and fabrication of terahertz emitter based on the SMT of VO$_{2}$. [Preview Abstract] |
Monday, March 14, 2016 10:00AM - 10:12AM |
A51.00011: Comparative electrochemical studies of a nanostructured vanadium oxide electrode material in aqueous electrolyte Victoria Soghomonian, Qifan Yuan, Shaola Ren, Julia Zukowski Electrochemical energy storage plays an increasing role in energy solutions. We report on a new hydrothermally synthesized vanadium oxide nanostructured material and study its performance as electrode material for insertion of various ions from aqueous solutions. The as-synthesized product is in the form of nanosheets forming quasi-spherical 3-dimensional objects. Variable temperature resistivity measurements indicate a thermally activated behavior. Electrodes are constructed, and comparative electrochemical insertion reactions of Li, Na, K and NH4 cations, over different cycle numbers, investigated. Concomitantly, morphological and microstructural changes are characterized by scanning electron microscopy, providing physical input to the observed electrochemical behavior. Specific charge is calculated. For Li and K, the specific charge decreases as the cycle number increases, while the reverse is observed for Na and NH4 cations. The trends are correlated to the morphological changes observed. The specific charge in the case of ammonium reaches 180 mAh/g after 20 cycles and continues increasing, indicating that ammonium cations may be considered as viable charge carriers for electrical energy storage system, and moreover in an aqueous electrolyte. [Preview Abstract] |
Monday, March 14, 2016 10:12AM - 10:24AM |
A51.00012: High efficiency on-chip three wave parametric frequency conversion and its applications in both classical and quantum optics Xiang Guo, Changling Zou, Carsten Schuck, Hojoong Jung, Risheng Cheng, Hong X. Tang Second order nonlinearity (?(2)) is one of the most widely explored properties in photonics. Integrating nonlinear devices on a photonic chip attracts more and more attention due to the devices’ small foot-print and large scalability. However, ?(2) nonlinearity in a scalable platform is normally believed to be weak due to difficulties in finding a suitable material with both high nonlinearity and compatibility with advanced nanofabrication technologies. Aluminum nitride is newly developed as a material combining such two properties: high nonlinearity in low-loss, small foot-print waveguide circuits. In experiment, we fabricate microring resonator devices supporting both telecom and visible modes and achieve exceptionally large second harmonic generation efficiency. High quality photon pair generation is further demonstrated with a generation rate of 3 MHz/mW for degenerate photon pair and 5.8 MHz/mW for non-degenerate photon pair. Furthermore, the strong nonlinearity results in coherent interaction between two spectraly far-away modes which manifest as a nonlinear optic induced transparency and efficient frequency converter. We envision more interesting and important applications in the AlN platform combining its outstanding linear and nonlinear properties. [Preview Abstract] |
Monday, March 14, 2016 10:24AM - 10:36AM |
A51.00013: Highly Stable Nanolattice Structures using Nonlinear Laser Lithography Ozgun Yavuz, Onur Tokel, Emre Ergecen, Ihor Pavlov, Ghaith Makey, Fatih Omer Ilday Periodic nanopatterning is crucial for multiple technologies, including photovoltaics and display technologies. Conventional optical lithography techniques require complex masks, while e-beam and ion-beam lithography require expensive equipment. With the Nonlinear Laser Lithography (NLL) technique, we had recently shown that various surfaces can be covered with extremely periodic nanopatterns with ultrafast lasers through a single-step, maskless and inexpensive method. Here, we expand NLL nanopatterns to flexible materials, and also present a fully predictive model for the formation of NLL nanostructures as confirmed with experiments. In NLL, a nonlocal positive feedback mechanism (dipole scattering) competes with a rate limiting negative feedback mechanism. Here, we show that judicious use of the laser polarisation can constrain the lattice symmetry, while the nonlinearities regulate periodicity. We experimentally demonstrate that in addition to one dimensional periodic stripes, two dimensional lattices can be produced on surfaces. In particular, hexagonal and square lattices were produced, which are highly desired for display technologies. Notably, with this approach, we can tile flexible substrates, which can find applications in next generation display technologies. [Preview Abstract] |
Monday, March 14, 2016 10:36AM - 10:48AM |
A51.00014: Adaptive quantum well/dot IR photodetector with modulated optical bias Andrei Sergeev, Kimberly Sablon Low doping of optical nanostructures leads to a weak electron coupling to radiation, because the radiation is absorbed due to electron transitions in nanoblocks (quantum wells and dots). High doping levels strongly enhance the absorption, but lead to high dark current and high noise current. This tradeoff is inevitable in traditional detector design and with conventional operating regimes, because the radiation absorption and dark current are both proportional to the number of electrons in nanoblocks. To overcome limitations related to the tradeoff between IR absorption and dark current, we propose and study the ``nonequilibrium'' IR quantum well or quantum dot photodetectors with modulated optical bias. Here we present design of the detector and results of modelling of key detector characteristics, such as responsivity, operating time, and noise equivalent power. [Preview Abstract] |
Monday, March 14, 2016 10:48AM - 11:00AM |
A51.00015: Multi-terminal Two-color ZnCdSe/ZnCdMgSe Based Quantum-well Infrared Photodetector Yasin Kaya, Arvind Ravikumar, Guopeng Chen, Maria C. Tamargo, Aidong Shen, Claire Gmachl Target recognition and identification applications benefits from two-color infrared (IR) detectors in the mid and long-wavelength IR regions. Currently, InGaAs/AlGaAs and GaAs/AlGaAs multiple quantum wells (QWs) grown on GaAs substrate are the most commonly used two-color QW IR photodetectors (QWIPs). However, the lattice-mismatch and the buildup of strain limit the number of QWs that can be grown, in turn increasing the dark current noise, and limiting the device detectivity.\par In this work, we report on two-color QWIPs based on the large conduction band offset ($\sim$1.12ev) ZnCdSe/ZnCdMgSe material system lattice matched to InP. QWIPs were designed based on a bound to quasi-bound transition, centered at 4 $\mu$m and 7 $\mu$m and each QW is repeated 50 times to eliminate the high dark current and a contact layer is inserted between the two stacks of QWs for independent electrical contacts. Wafers are processed into two step rectangular mesas by lithography and wet etching. Experiments showed absorption spectra centered at 4.9 $\mu$m and 7.6 $\mu$m at 80 K and the full width at half maximums were $\Delta\lambda/\lambda=21\%$ and $\Delta\lambda/\lambda=23\%$, respectively. Current work studies the Johnson and the background noise limited detectivities of these QWIPs. [Preview Abstract] |
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