APS March Meeting 2014
Volume 59, Number 1
Monday–Friday, March 3–7, 2014;
Denver, Colorado
Session T39: Invited Session: Collective Phenomena in Two-Dimensional Atomic Crystals and Their Heterostructures
11:15 AM–2:15 PM,
Thursday, March 6, 2014
Room: Mile High Ballroom 2A-3A
Sponsoring
Unit:
DCMP
Chair: Philip Kim, Columbia University
Abstract ID: BAPS.2014.MAR.T39.1
Abstract: T39.00001 : Graphene, other 2D atomic crystals and their heterostructures
11:15 AM–11:51 AM
Preview Abstract
Abstract
Author:
Kostya S. Novoselov
(University of Manchester)
Probably the most important ``property'' of graphene is that it has opened a
floodgate of experiments on many other 2D atomic crystals: BN,
NbSe$_{2}$, TaS$_{2}$, MoS$_{2}$, \textit{etc}. One can use
similar strategies to those applied to graphene and obtain new materials by
mechanical or liquid phase exfoliation of layered materials or CVD growth.
An alternative strategy to create new 2D crystals is to start with an
existing one (like graphene) and use it as an atomic scaffolding to modify
it by chemical means (graphane and fluorographene are good examples). The
resulting pool of 2D crystals is huge, and they cover a massive range of
properties: from the most insulating to the most conductive, from the
strongest to the softest.
If 2D materials provide a large range of different properties, sandwich
structures made up of 2, 3, 4 \textellipsis different layers of such
materials can offer even greater scope. Since these 2D-based
heterostructures can be tailored with atomic precision and individual layers
of very different character can be combined together, - the properties of
these structures can be tuned to study novel physical phenomena (Coulomb
drag, Hostadter butterfly, metal-insulator transition, etc) or to fit an
enormous range of possible applications, with the functionality of
heterostructure stacks is ``embedded'' in their design (tunnelling or
hot-electron transistors, photovoltaic devices).
Of particular interest are the tunnelling structures. Being able to control
the thickness with atomic precision and having a variety of different
material in disposal allows us to modify both the height and the width of
the tunnelling barrier in the wide range. The use of graphene as electrodes
and utilising insulating (BN) or semiconducting (MoS$_{2}$,
WS$_{2})$ materials as the tunnelling barrier led to the creation
of tunnelling transistors and tunnelling photovoltaic devices and the
observation of the resonance tunnelling associated with momentum
conservation. We will also consider tunnelling in magnetic field and
phonon-assisted tunnelling.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2014.MAR.T39.1