Bulletin of the American Physical Society
APS March Meeting 2014
Volume 59, Number 1
Monday–Friday, March 3–7, 2014; Denver, Colorado
Session T23: Invited Session: Industrial Physics Forum: Device Physics at the Nanoscale
11:15 AM–2:15 PM,
Thursday, March 6, 2014
Sponsoring Unit: FIAP
Chair: Ernesto Marinero, Purdue University
Abstract ID: BAPS.2014.MAR.T23.2
Abstract: T23.00002 : Nanoscale Magnetic Tunnel Junction*
11:51 AM–12:27 PM
Preview Abstract Abstract
I review state-of-the-art magnetic tunnel junction technology, which is now passing the 20 nm device dimension; the smallest and well characterized reported so far reaching 11 nm . The physics involved in realizing high performance nanoscale magnetic tunnel junction in terms of tunnel magnetoresistance ratio, threshold current for spin-transfer switching, and thermal stability as well as the materials science involved in the technology will be addressed. To simultaneously meet multiple requirements for applications further control and design of materials at the nanometer scale are required. I will discuss about the challenges and future prospects.\\[4pt]  H. Sato et al. IEDM 2013.
*This work is supported by the FIRST program of JSPS and by the R\&D for Next-Generation Information Technology of MEXT.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2014.MAR.T23.2
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