Bulletin of the American Physical Society
APS March Meeting 2013
Volume 58, Number 1
Monday–Friday, March 18–22, 2013; Baltimore, Maryland
Session G4: Invited Session: Frontiers in Nanomanufacturing: Atomic Scale Metrology, Large Scale Industry Technology Challegnes and Inherent Device Limitations |
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Sponsoring Units: FIAP Chair: Ernesto Marinero, Hitachi Research Center, San Jose Room: Ballroom IV |
Tuesday, March 19, 2013 11:15AM - 11:51AM |
G4.00001: Time-Resolved, Atomic-Resolution Imaging of Metastable Atom Configurations Invited Speaker: Christian Kisielowski In the recent past significant initiatives are dedicated to the exploration of sustainable energy solutions. Certainly, related research must address a rich diversity of challenges because it is not only the static arrangement of matter that must be understood at a single atom level but also the collective behavior of molecular assemblies that leads to functionality. Moreover, hybrid materials are commonly employed that contain hard and soft matter components to artificially stimulate complex behavior. Electron microscopy is often considered a method of choice that may address these challenges if further improved. This paper reports on the development of in-line holography for atomic-resolution electron microscopy, which makes use of dose rates as low as a few atto Amperes per square {\AA}ngstrom and of variable acceleration voltages between 20 kV and 300 kV [1]. The approach allows for enhancing resolution in radiation sensitive materials and is especially well suited to study the time evolution of nanoscale objects with single atom sensitivity. For the first time temporary displacements of single atoms from their equilibrium lattice sites into metastable sites across a projected distance of only 0.07 nm and 0.10 nm are directly captured in images with a time resolution around one second. These temporary excitations seem relevant to the irreversible transformation of graphene into carbene and to self-diffusion in catalysts. In suitable experimental conditions, however, atom displacements of 0.05 - 0.1 nm are entirely reversible. Exploiting the reversible nature of such excitations, it may become feasible to probe for conformational object changes in beam sensitive materials at improved spatial resolution. \\[4pt] [1] B. Barton, B. Jiang, C.Y. Song, P. Specht, H. Calderon, C, Kisielowski, Atomic-resolution phase-contrast imaging and in-line electron holography using variable voltage and dose rate, \textbf{Microsc. Microanal. 18} (2012) 982--994 [Preview Abstract] |
Tuesday, March 19, 2013 11:51AM - 12:27PM |
G4.00002: TBD Invited Speaker: Thomas Albrecht |
Tuesday, March 19, 2013 12:27PM - 1:03PM |
G4.00003: Scalable fabrication of nanostructured devices on flexible substrates using additive driven self-assembly and nanoimprint lithography Invited Speaker: James Watkins Roll-to-roll (R2R) technologies provide routes for continuous production of flexible, nanostructured materials and devices with high throughput and low cost. We employ additive-driven self-assembly to produce well-ordered polymer/nanoparticle hybrid materials that can serve as active device layers, we use highly filled nanoparticle/polymer hybrids for applications that require tailored dielectric constant or refractive index, and we employ R2R nanoimprint lithography for device scale patterning. Specific examples include the fabrication of flexible floating gate memory and large area films for optical/EM management. Our newly constructed R2R processing facility includes a custom designed, precision R2R UV-assisted nanoimprint lithography (NIL) system and hybrid nanostructured materials coaters. [Preview Abstract] |
Tuesday, March 19, 2013 1:03PM - 1:39PM |
G4.00004: to be determined Invited Speaker: Asen Asenov |
Tuesday, March 19, 2013 1:39PM - 2:15PM |
G4.00005: Imagining and Imaging Future Devices: A Physicist's Dream Invited Speaker: Scott List In the past device scaling followed conventional Dennard scaling with recent introductions of stress to enhance mobility and high k dielectrics to reduce leakage. Future devices will initially need improved electrostatic confinement with associated geometrical complexity, mobility improvements through new materials, steeper sub-threshold slopes through bandgap engineering and 3D system integration. Eventually new state variables beyond electron charge will be necessary to provide both extremely low power and non-volatility. To enable these changes, improved atomic resolution metrology techniques for both complex 3D geometries and new state variables will be required. While there is still plenty of room at the bottom for the physics of these devices, we are more rapidly running out of room for measuring and controlling these devices. Physicists will have an increasingly important role for both imagining and imaging these devices. [Preview Abstract] |
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