Bulletin of the American Physical Society
APS March Meeting 2013
Volume 58, Number 1
Monday–Friday, March 18–22, 2013; Baltimore, Maryland
Session G18: Two Dimensional Topological Insulators II: Graphene and Related Materials
11:15 AM–1:51 PM,
Tuesday, March 19, 2013
Room: 320
Sponsoring
Unit:
DCMP
Chair: Shaffique Adam, Yale University
Abstract ID: BAPS.2013.MAR.G18.11
Abstract: G18.00011 : Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well*
1:15 PM–1:27 PM
Preview Abstract Abstract
Authors:
M.S. Miao
(Materials department and materials Research Lab, University of California Santa Barbara, California 93106-5050, USA)
Q. Yan
(Materials department and materials Research Lab, University of California Santa Barbara, California 93106-5050, USA)
C.G. Van de Walle
(Materials department and materials Research Lab, University of California Santa Barbara, California 93106-5050, USA)
W.K. Lou
(SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China)
L.L. Li
(SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China)
K. Chang
(SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China)
*We thank grants: DOE-BES (Grant No. DE-SC0001009); NSF- DGE0801627; MRSEC program (NSF- DMR1121053); NSF DMR-0906805; China 973-program 2011CB922204 and China NSF 10934007.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2013.MAR.G18.11
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