Session J14: Magnetic Devices and Techniques

2:30 PM–5:30 PM, Tuesday, March 19, 2013
Room: 316

Sponsoring Unit: GMAG
Chair: Mohammad Fashami, The Virginia Commonwealth University

Abstract ID: BAPS.2013.MAR.J14.8

Abstract: J14.00008 : Dynamic state switching in nonlinear multiferroic cantilevers

3:54 PM–4:06 PM

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Authors:

  Yi Wang
    (Department of Physics, University of Maryland, College Park, Maryland 20742, USA)

  Tiberiu-Dan Onuta
    (Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA)

  Christian J. Long
    (Department of Physics, University of Maryland, College Park, Maryland 20742, USA)

  Samuel E. Lofland
    (Department of Physics and Astronomy, Rowan University, Glassboro, New Jersey 08028, USA)

  Ichiro Takeuchi
    (Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA)

We demonstrate read-write-read-erase cyclical mechanical-memory properties of all-thin-film multiferroic heterostructured Pb(Zr$_{0.52}$Ti$_{0.48})$O$_{3}$ / Fe$_{0.7}$Ga$_{0.3}$ cantilevers when a high enough voltage around the resonant frequency of the device is applied on the Pb(Zr$_{0.52}$Ti$_{0.48})$O$_{3}$ piezo-film. The device state switching process occurs due to the presence of a hysteresis loop in the piezo-film frequency response, which comes from the nonlinear behavior of the cantilever. The reference frequency at which the strain-mediated Fe$_{0.7}$Ga$_{0.3}$ based multiferroic device switches can also be tuned by applying a DC magnetic field bias that contributes to the increase of the cantilever effective stiffness. The switching dynamics is mapped in the phase space of the device measured transfer function characteristic for such high piezo-film voltage excitation, providing additional information on the dynamical stability of the devices.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2013.MAR.J14.8