Bulletin of the American Physical Society
APS March Meeting 2012
Volume 57, Number 1
Monday–Friday, February 27–March 2 2012; Boston, Massachusetts
Session W14: Focus Session: Spins in Semiconductors - Ferromagnetism and Spin Dynamics in Semiconductors
11:15 AM–2:15 PM,
Thursday, March 1, 2012
Room: 212
Sponsoring
Units:
GMAG DMP FIAP
Chair: John Peters, Northwestern University
Abstract ID: BAPS.2012.MAR.W14.1
Abstract: W14.00001 : Spin Dynamics in Bi2Se3 / GaAs Heterostructures
11:15 AM–11:27 AM
Preview Abstract
Abstract
Authors:
Andrew L. Yeats
(Center for Spintronics and Quantum Computation, University of California, Santa Barbara CA 93106)
Paul V. Klimov
(Center for Spintronics and Quantum Computation, University of California, Santa Barbara CA 93106)
Bob B. Buckley
(Center for Spintronics and Quantum Computation, University of California, Santa Barbara CA 93106)
Anthony Richardella
(Center for Nanoscale Science \& Dept. of Physics, Penn State University, University Park PA 16802)
Duming M. Zhang
(Center for Nanoscale Science \& Dept. of Physics, Penn State University, University Park PA 16802)
Nitin Samarth
(Center for Nanoscale Science \& Dept. of Physics, Penn State University, University Park PA 16802)
Michael E. Flatte
(Dept. of Physics, University of Iowa, Iowa City IA 52242)
David D. Awschalom
(Center for Spintronics and Quantum Computation, University of California, Santa Barbara CA 93106)
The narrow band gap semiconductor Bi$_2$Se$_3$ has been characterized as a topological insulator (TI), wherein strong spin-orbit coupling and time-reversal symmetry give rise to spin-polarized surface conduction states. Molecular beam epitaxy (MBE) of Bi$_2$Se$_3$ thin films onto conventional semiconductors such as GaAs [1] provides an attractive pathway for the creation of hybrid devices, coupling the exotic spin physics of TIs with the well-understood properties of spin coherence in semiconductors. We employ spatio-temporally resolved optoelectronic techniques to probe the carrier spin dynamics at the heterointerface between a TI and GaAs. Results are compared with interface band structure calculations.\\[4pt] This work is supported by ONR and NSF. \\[4pt] [1] A.~Richardella, D.~M.~Zhang, J.~S.~Lee, A.~Koser, D.~W.~Rench, A.~L.~Yeats, B.~B.~Buckley, D.~D.~Awschalom and N.~Samarth, {\it Appl.~Phys.~Lett.} {\bf 97}, 262104 (2010).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2012.MAR.W14.1
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