Bulletin of the American Physical Society
APS March Meeting 2012
Volume 57, Number 1
Monday–Friday, February 27–March 2 2012; Boston, Massachusetts
Session J37: SPS Undergraduate Research IV
11:15 AM–12:39 PM,
Tuesday, February 28, 2012
Sponsoring Unit: SPS
Chair: Peter Muhoro, American Physical Society
Abstract ID: BAPS.2012.MAR.J37.6
Abstract: J37.00006 : Characterization of the GaN-MgO Transistor Interface: More Power and Efficiency*
12:15 PM–12:27 PM
Preview Abstract Abstract
(University of Puerto Rico at Mayaguez)
In this age of high-energy consumption, the development of more efficient and more reliable devices is indispensable. Gallium nitride (GaN)-based devices are an option in achieving this goal. GaN's wide bandgap of 3.4 eV allows the device to handle large amount of current before leakage makes its energy consumption inefficient. The characteristics of GaN, in conjunction with those of Magnesium oxide (MgO), would allow for improvement of different electronic applications such as mobile phone communication technology. In this work, the fabrication of the GaN/MgO device was done by Molecular Beam Epitaxy. This device was grown under a variety of parameters where the growth temperature, growth chamber pressure, and the rate of material deposition were changed. To determine the optimal growth parameters, current-voltage and capacitance-voltage measurements were conducted on to evaluate the effects of these growth conditions. Atomic Force Microscopy was also used in characterizing the crystallinity and morphology of the samples. A conclusion of the research is that by improving the roughness of the substrate, the breakdown voltage of the MgO layer and the overall performance of the device can be improve, yielding a device with very low energy loss in the current transmission process.
*The research was conducted under the Leadership Alliance, The Summer Undergraduate Research Fellowship (SURF) Program at Yale University, and the Center for Research on Interface Structure and Phenomena (CRISP) REU programs.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2012.MAR.J37.6
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