Session X12: Focus Session: Graphene: Growth, Mechanical Exfoliation, and Properties - Morphology and Interactions

2:30 PM–5:30 PM, Thursday, March 1, 2012
Room: 210C

Sponsoring Unit: DMP
Chair: Luigi Colombo, Texas Instruments

Abstract ID: BAPS.2012.MAR.X12.1

Abstract: X12.00001 : Atomic Scale Properties of Chemically Doped Graphene

2:30 PM–3:06 PM

Preview Abstract   MathJax On | Off   Abstract  


  Abhay Pasupathy
    (Columbia University)

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration. Ref: L. Zhao et al, \textit{Science} \textbf{333},999 (2011).

To cite this abstract, use the following reference: