Session J16: Vanadium Dioxide; Nano and Devices

11:15 AM–2:15 PM, Tuesday, February 28, 2012
Room: 251

Sponsoring Unit: DCMP
Chair: Ivan Schuller, University of California, San Diego

Abstract ID: BAPS.2012.MAR.J16.7

Abstract: J16.00007 : Ionic Liquid Gated Vanadium Oxide Three Terminal Devices: Chemical Stability and Field Effect

12:27 PM–12:39 PM

Preview Abstract MathJax On | Off   Abstract  

Authors:

  You Zhou
    (Harvard University)

  Zheng Yang
    (Harvard University)

  Shriram Ramanathan
    (Harvard University)

Understanding electrostatic field effect in correlated oxides is one approach to uncovering mechanisms leading to metal-insulator transition and further is of great interest in oxide-based device technologies. We have fabricated ionic liquid gated VO$_{2}$ three-terminal devices. The VO$_{2}$/IL interface properties were systematically studied with emphasis on electrochemical stability, gate capacitance and charging/discharging using photoelectron spectroscopy, impedance spectroscopy and other electrical characterization. We have observed a large modulation of VO$_{2}$ channel conductance at room temperature with polarity dependence. Interestingly, the conductance modulation also exhibits a time-dependent response to external gate bias and possible mechanisms will be discussed.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2012.MAR.J16.7