Session A12: Graphene: Electronic Structure and Interactions - Adsorbates, Doping and Defects
8:00 AM–11:00 AM, Monday, February 27, 2012
Room: 210C
Sponsoring Unit:
DCMP
Chair: Jian-Hao Chen, University of California, Berkeley
Abstract ID: BAPS.2012.MAR.A12.8
Abstract: A12.00008 : Overcoming Doping Difficulty in Graphene via Substrate
9:24 AM–9:36 AM
Preview Abstract
MathJax On | Off 
Abstract 
Authors:
Su-Huai Wei
(National Renewable Energy Laboratory)
Bing Huang
(National Renewable Energy Laboratory)
Hongjun Xiang
(National Renewable Energy Laboratory)
Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather challenge. Using first-principles method we find that doping could be strongly enhanced in epitaxial graphene grown on silicon carbide substrate. Compared to free-standing graphene, the formation energies of the dopants can decrease by as much as 8 eV. The type and density of the charge carriers of epitaxial graphene layer can be effectively manipulated by suitable dopants and surface passivation. More importantly, contrasting to the direct doping of graphene, the charge carriers in epitaxial graphene layer are weakly scattered by dopants due to the spatial separation between dopants and conducting channel.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2012.MAR.A12.8