Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Session W2: CVD Graphene: Synthesis, Properties and Applications |
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Sponsoring Units: DCMP Chair: Millie Dresselhaus, Massachusetts Institute of Technology Room: Ballroom A2 |
Thursday, March 24, 2011 11:15AM - 11:51AM |
W2.00001: Chemical Vapor Deposition of Large-size Monolayer Graphene and Properties Invited Speaker: Graphene is of interest in part due to its electronic and thermal transport, mechanical properties including high stiffness and the possibility of high strength and toughness, high specific surface area, and that it can act as an atom thick layer, barrier, or membrane. Our top-down micromechanical exfoliation approaches conceived of in 1998 [1, 2] yielded multilayer graphene. Two main areas of our research are: (i) CVD growth of large area graphene films on metal substrates, characterization and properties of such films, and (ii) The generation, study, and use of colloids containing graphene-based platelets. We present our work on CVD growth of graphene on metal substrates, including the first achievement of large area growth of monolayer graphene [3], studies on understanding growth [related references: 3-6]. Properties such as TCE [7], thermal conductivity [8], and mechanical properties [related reference: 9], will be presented. An excellent review of graphene is [10]. A history of experimental work on graphene (from its discovery in 1969 until now) will be available on our web site: http://bucky-central.me.utexas.edu/ prior to the meeting. Ruoff group publications: http://bucky-central.me.utexas.edu/publications.htm.\\[4pt] [1] Tailoring graphite with the goal of achieving single sheets, Nanotechnology 10, 269-272 (1999).\\[0pt] [2] APL 75, 193-195 (1999).\\[0pt] [3] Large-area synthesis of high-quality and uniform graphene films on copper foils, Science 324, 1312-1314 (2009).\\[0pt] [4] Evolution of Graphene Growth on Ni and Cu by Carbon Isotope Labeling, Nano Letters 9, 4268 (2009).\\[0pt] [5] Synthesis, Characterization, and Properties of Large-Area Graphene Films, ECS Transactions 19, 41-52 (2009).\\[0pt] [6] Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process, Nano Letters, (2010).\\[0pt] [7] Transfer of large-area graphene films for high-performance transparent conductive electrodes, Nano Letters, 9, 4359-4363 (2009).\\[0pt] [8] Thermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition, Nano Letters, 10, 1645-1651 (2010).\\[0pt] [9] Mechanical Properties of Monolayer Graphene Oxide, ACS Nano, (2010).\\[0pt] [10] Graphene and Graphene Oxide: Synthesis, Properties, and Applications, Advanced Materials, 22, 3906-3924 (2010). [Preview Abstract] |
Thursday, March 24, 2011 11:51AM - 12:27PM |
W2.00002: Roll-to-roll production of 30-inch graphene films for transparent electrodes Invited Speaker: The outstanding electrical1, mechanical and chemical properties of graphene make it attractive for applications in flexible electronics. However, efforts to make transparent conducting films from graphene have been hampered by the lack of efficient methods for the synthesis, transfer and doping of graphene at the scale and quality required for applications. Here, we report the roll-to-roll production and wet-chemical doping of predominantly monolayer 30-inch graphene films grown by chemical vapour deposition onto flexible copper substrates. The films have sheet resistances as low as $\sim $125 Ohm/sq with 97.4{\%} optical transmittance, and exhibit the half-integer quantum Hall effect, indicating their high quality. We further use layer-by-layer stacking to fabricate a doped four-layer film and measure its sheet resistance at values as low as $\sim $30 Ohm/sq at $\sim $90{\%} transparency, which is superior to commercial transparent electrodes such as indium tin oxides. Graphene electrodes were incorporated into a fully functional touch-screen panel device capable of withstanding high strain. [Preview Abstract] |
Thursday, March 24, 2011 12:27PM - 1:03PM |
W2.00003: Structural and electronic properties of graphene grown by chemical vapor deposition (CVD) Invited Speaker: Graphene grown by chemical vapor deposition (CVD) has brought many exciting opportunities for both fundamental studies and practical applications. In this talk, I will present our studies of the structural and electronic properties of graphene synthesized by ambient CVD based growth on polycrystalline Ni and Cu foils. Our earlier work on graphene layers and large scale graphitic thin films grown on Ni and transferred to insulators [1,2] show that such films can have excellent electronic properties, despite their structural non-uniformity. We also characterized the wrinkles in such films, yielding insights on their growth and buckling processes [3]. On Cu foils, we have synthesized wafer-scale graphene films consisting of predominantly monolayer graphene [4]. We have studied the electronic transport properties [4], including field effect, ``half-integer'' quantum Hall effect (electronic hall-mark of graphene) and weak localization (probing carrier scattering) in such synthetic graphene transferred to SiO2/Si substrates and characterized its structural properties by Raman mapping, transmission electron microscopy (TEM) and scanning tunneling microscopy (STM). We have also studied thermal transport in CVD graphene using both electrical and Raman measurements [5]. Finally, one of the outstanding issues in large scale CVD graphene, which can be monolayer but generally polycrystalline, is the role of grain boundaries. I will present our recent studies of single crystal graphene grains (hexagonally-shaped with edges macroscopically aligned close to zigzag directions) grown on Cu, and how individual grain boundaries affect the electronic transport properties [6]. Work in collaboration with Q. Yu, H. Cao, L. Jauregui, J. Tian, N. Guisinger, R. Colby and E.A.Stach. \\[4pt] [1] Q. Yu et al., Appl. Phys. Lett. 93, 113103 (2008);\\[0pt] [2] H. Cao et al., J. Appl. Phys. 107, 044310 (2010);\\[0pt] [3] R. Colby et al., Diamond Relat. Mater. 19, 143 (2010)\\[0pt] [4] H. Cao et al. Appl. Phys. Lett. 96, 122106 (2010)\\[0pt] [5] L. Jauregui et al. ECS Trans. 28 (5), 73 (2010)\\[0pt] [6] Q.Yu and L.A. Jauregui et al., arXiv:1011 (2010) [Preview Abstract] |
Thursday, March 24, 2011 1:03PM - 1:39PM |
W2.00004: Atomistic view in the initial stages of growth of epitaxial graphene on metal substrates Invited Speaker: For both fundamental studies and potential development of graphene electronics, it is pressing to search for reliable methods for mass production of quality graphene. Epitaxial growth of graphene on catalytic metal substrates combined with post-growth transfer has become a promising route towards this goal [1,2]. However, to better control the quality and yield of graphene, a comprehensive understanding of the growth kinetics is essential. In particular, how the carbon atoms adsorbed on the metal surface (or dissolved into the metal) meet to nucleate into stable carbon islands will greatly influence both the growth rate and quality of larger carbon entities such as graphene sheets. In this talk, we first show that the delicate competition between carbon-carbon bonding and carbon-metal bonding dictates the initial nucleation sites of graphene on metal surfaces [3]. These results are discussed in connection with the experimental findings that on Ir(111) and Ru(0001) substrates graphene nucleates from the step edges [4,5]. We also predict that on Cu(111) nucleation should take place everywhere on a terrace [3]. Next we study larger carbon clusters on Cu(111) and explicitly compare the stability of linear and compact structures. We find that the linear carbon ``nanoarches'' are more stable than compact islands consisting of up to 13 carbon atoms, and these nanoarched structures may serve as the missing bridge between carbon dimers and larger graphene nanodomes. Based on these improved understanding of the atomistic rate processes involved, we propose a few kinetic pathways that may lead to better growth control of bilayer graphene and graphene nanoribbons as elemental building blocks for developing graphene electronics. \\[4pt] [1] Q. K. Yu, et al., Appl. Phys. Lett. 93, 113103 (2008).\\[0pt] [2] X. S. Li, et al., Science 324, 1312 (2009).\\[0pt] [3] H. Chen, W. G. Zhu, and Z. Y. Zhang, Phys. Rev. Lett. 104, 186101 (2010); R. van Wesep et al., to be published.\\[0pt] [4] E. Loginova et al., New J. Phys. 10, 093-026 (2008).\\[0pt] [5] J. Coraux et al., New J. Phys. 11, 023-006 (2009). [Preview Abstract] |
Thursday, March 24, 2011 1:39PM - 2:15PM |
W2.00005: Graphene synthesis, characterization, and processing: an atomic-scale investigation Invited Speaker: Graphene is nature's ideal two-dimensional conductor that is comprised of a single sheet of hexagonally packed carbon atoms. Since the first electrical measurements made on graphene, researchers have been trying to exploit the unique properties of this material for a variety of applications that span numerous scientific and engineering disciplines. In order fully realize the potential of graphene, large scale synthesis of high quality graphene and the ability to control the electronic properties of this material on a nanometer length-scale remain key challenges. This talk will focus on atomic-scale characterization of graphene synthesis on various materials (SiC, Cu(111), Cu foil, etc) via scanning tunneling microscopy. These fundamental studies explore growth dynamics, film quality, and the role of defects. The chemical modification of graphene following exposure to atomic hydrogen will be discussed, while additional emphasis will be made on graphene's unique structural (not electronic) properties. [Preview Abstract] |
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