Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: S1.00241 : Photocurrent enhancement of an individual gallium nitride nanowire decorated with gold nanoparticles
Author:
Variation in electron transport properties of individual n-type
gallium
nitride (GaN) nanowire and gold decorated gallium nitride
(Au-GaN) nanowire
were studied with respect to laser exposure of different
wavelength and
intensity. Single nanowire devices were manufactured by
photolithography
process in nanotechnology cleanroom, were characterized by
scanning electron
microscope (SEM) and transmission electron microscope (TEM). A
drop in
electrical conductivity of Au-GaN nanowire was observed relative
to bare GaN
nanowire. Under laser illumination, we noticed an enhancement in
photocurrent in Au-GaN nanowire, which increased with increase in
excitation
power at ambient conditions. We present a comparative study of the
opto-electrical behavior of bare GaN nanowire vs Au-GaN nanowire
and explain
the IV characteristics and FET characteristics with respect to
the length
and diameter of nanowire.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.S1.241
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