Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: S1.00186 : Effects of Iridium interfacial nanolayers on stability and barrier hights of TCO/Si nano-holes Solar cell structures
Author:
There is still a significant gap between currently achieved efficiencies and
theoretical one. A fundamental understanding of physico-chemical and
electronic properties as well as tuning and control of transparent
conducting oxides (TCOs) and nano-structured semiconductor absorber material
interfaces is critical. One of the many issues is the suspected formation of
silicon oxides due to transport of oxygen from TCO to silicon that degrades
the effectiveness of light generated charge transfer which eventually
degrades final efficiency of solar cell. The fabrication of 3-D nano-holes
in Si was obtained by electrochemical etching through anodic nano-porous
alumina. The nano-porous alumina was prepared by depositing thick
1micrometer aluminum layer on RCA cleaned Si samples, annealing in Ar
and using hard anodization process. One to few mono-layers
of Ir were inserted at the TCO/Si interfaces to block the depletion of
oxygen to stabilize the interface and tune its barrier height. Both ITO and
ZnO were used as TCOs. The effect of Ir on the band alignment at these
interfaces is evaluated by Ultraviolet Photoelectron Spectroscopy (UPS). The
interface stability and chemical nature is evaluated by X-ray Photoelecton
Spectroscopy (XPS).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.S1.186
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