APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011;
Dallas, Texas
Abstract: P3.00002 : David Adler Lectureship Award in the Field of Materials Physics Talk: Novel Nitride and Oxide Electronics
8:36 AM–9:12 AM
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Recent progress in development of GaN-based transistors for gas
and bio-sensing applications and amorphous IGZO layers for use
thin film transistors (TFTs)on flexible substrates, including
paper,will be presented. For the detection of gases such as
hydrogen, the gateless GaN transistors are typically coated with
a catalyst metal such as Pd or Pt to increase the detection
sensitivity at room temperature. Functionalizing the surface with
oxides, polymers and nitrides is also useful in enhancing the
detection sensitivity for gases and ionic solutions.The use of
enzymes or adsorbed antibody layers on the semiconductor surface
leads to highly specific detection of a broad range of antigens
of interest in the medical and security fields. We give examples
of recent work showing sensitive detection of glucose, lactic
acid, prostate cancer and breast cancer markers and the
integration of the sensors with wireless data transmission
systems to achieve robust, portable sensors. The amorphous
transparent conducting oxide InZnGaO4 (IGZO) is attracting
attention because of its high electron mobility (10-50
cm2.V-1.sec-1), high transparency in the visible region of the
spectrum and its ability to be deposited with a wide range of
conductivities.This raises the possibility of making low-cost
electronics on a very wide range of arbitrary surfaces, including
paper and plastics. N-type oxides such as zinc oxide, zinc tin
oxide, indium gallium oxide, and indium gallium zinc tin oxide
(IGZO) exhibit surprisingly high carrier mobilities even for
amorphous films deposited at 300K. This has been explained by the
fact that the conduction in these materials is predominantly
through non-directional s orbitals which are less affected by
disorder than the directional sp3 orbitals which control electron
transport in Si. Examples of progress and discussion of remaining
obstacles to use of IGZO TFTs will be presented
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.P3.2